TSM8588CS Taiwan Semiconductor Complementary N & P-Channel Power MOSFET FEATURES KEY PERFORMANCE PARAMETERS Low gate charge for fast power switching PARAMETER TYPE VALUE UNIT 100% UIS and R tested g Q1 60 V DS V Compliant to RoHS directive 2011/65/EU and in Q2 -60 accordance to WEEE 2002/96/EC V = 10V 103 GS Q1 Halogen-free according to IEC 61249-2-21 V = 4.5V 122 R GS DS(on) m (max) V = -10V 180 GS Q2 V = -4.5V 220 GS APPLICATIONS Q1 4.4 Q Building technologies g nC Q2 4.6 DC Fan Motor drives SOP-8 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL Q1 Q2 UNIT Drain-Source Voltage V 60 -60 V DS Gate-Source Voltage V 20 20 V GS T = 25C 5 -4 C Continuous Drain Current I A D T = 25C 2.5 -2 A (Note 1) Pulsed Drain Current I 20 -16 A DM (Note 2) Single Pulse Avalanche Current I 6.8 -7 A AS (Note 2) Single Pulse Avalanche Energy E 6.9 7.4 mJ AS T = 25C 5.7 5.7 C Total Power Dissipation P W D T = 125C 1.1 1.1 C T = 25C 1.4 1.4 A Total Power Dissipation P W D T = 125C 0.3 0.3 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL MAXIMUM UNIT Thermal Resistance Junction to Case R 22 JC C/W Thermal Resistance Junction to Ambient R 88 JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JC CA 2 determined by the users board design. The R limit presented here is based on mounting on a 1 in pad of 2 oz copper. JA 1 Version: A1811 TSM8588CS Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYPE MIN TYP MAX UNIT Static V = 0V, I = 250A Q1 60 -- -- Drain-Source GS D BV V DSS Breakdown Voltage V = 0V, I = -250A Q2 -60 -- -- GS D V = V , I = 250A Q1 1.2 1.8 2.5 GS DS D Gate Threshold Voltage V V GS(TH) V = V , I = -250A Q2 -1 -1.5 -2.5 GS DS D V = 20V, V = 0V Q1 -- -- 100 nA Gate-Source Leakage GS DS I GSS Current V = 20V, V = 0V Q2 -- -- 100 nA GS DS V = 0V, V = 60V Q1 -- -- 1 Drain-Source Leakage GS DS I A DSS Current V = 0V, V = -60V Q2 -- -- -1 GS DS V = 10V, I = 2.5A -- 74 103 GS D Q1 Drain-Source On-State V = 4.5V, I = 2.3A -- 86 122 GS D R m DS(on) (Note 3) Resistance V = -10V, I = -2A -- 135 180 GS D Q2 V = -4.5V, I = -1.7A -- 170 220 GS D V = 10V, I = 2.5A Q1 -- 10 -- Forward DS D g S fs (Note 3) Transconductance V = -10V, I = -2A Q2 -- 5 -- DS D (Note 4) Dynamic Q1 -- 9.4 -- Total Gate Charge Q g(VGS=10V) Q2 -- 9 -- -- -- Q1 4.4 Q1 Total Gate Charge Q g(VGS=4.5V) -- -- Q2 4.6 V = 30V, I = 2.5A DS D nC -- -- Q2 Q1 1.8 Gate-Source Charge Q gs -- -- V = -30V, I = -2A Q2 1.2 DS D -- -- Q1 2.3 Gate-Drain Charge Q gd -- -- Q2 2.4 -- -- Q1 527 Q1 Input Capacitance C iss -- -- Q2 436 V = 0V, V = 30V GS DS -- -- f = 1.0MHz Q1 31 Output Capacitance C pF oss Q2 Q2 -- 32 -- V = 0V, V = -30V -- -- Reverse Transfer Q1 4 GS DS C rss f = 1.0MHz -- -- Capacitance Q2 11 0.5 3.6 Q1 1.8 Gate Resistance f = 1.0MHz R g 5 34 Q2 17 (Note 4) Switching Q1 -- 5 -- Turn-On Delay Time t d(on) -- 3.4 -- Q2 Q1 -- 21 -- V = 10V, V = 30V, Q1 GS DS Turn-On Rise Time t r 21 -- -- I = 2.5A, R = 2 Q2 D G ns 10 -- -- Q2 Q1 Turn-Off Delay Time t d(off) 21 V = -10V, V = -30V, -- -- Q2 GS DS 17 I = -2A, R = 2 Q1 -- -- D G Turn-Off Fall Time t f 26 -- -- Q2 2 Version: A1811