TSM9409 60V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain V (V) R (m) I (A) 2. Source 7. Drain DS DS(on) D 3. Source 6. Drain 155 V = -10V -3.5 GS 4. Gate 5. Drain -60 200 V = 4.5V -3.1 GS Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Package Packing TSM9409CS RLG SOP-8 2.5Kpcs / 13 Reel Note: G denote for Halogen Free Product P-Channel MOSFET Absolute Maximum Rating (Ta = 25C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V -60 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I -3.5 A D Pulsed Drain Current I -30 A DM a,b Continuous Source Current (Diode Conduction) I -2.5 A S T = 25C 3.0 A Maximum Power Dissipation P W D T = 70C 2.1 A Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance R 30 C/W JC Junction to Ambient Thermal Resistance (PCB mounted) R 50 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 10 sec. Document Number: DS P0000153 1 Version: C15 TSM9409 60V P-Channel MOSFET Electrical Specifications (Ta = 25C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = -250uA BV -60 -- -- GS D DSS V Gate Threshold Voltage V = V , I = -250A V -1.0 -- -- V DS GS D GS(TH) Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = -60V, V = 0V I -- -- -1.0 DS GS DSS A a On-State Drain Current V =-5V, V = -10V I -20 -- -- DS GS D(ON) A V = -10V, I = -3.5A -- 125 155 GS D a Drain-Source On-State Resistance R m DS(ON) V = -4.5V, I = -3.1A -- 153 200 GS D a Forward Transconductance V = -15V, I = -3.5A g -- 8 -- S DS D fs Diode Forward Voltage I = -2.5A, V = 0V V -- -1.25 -1.5 V S GS SD b Dynamic Total Gate Charge Q -- 6 -- g V = -15V, I = -3.5A, DS D nC Gate-Source Charge Q -- 1.7 -- gs V = -10V GS Gate-Drain Charge Q -- 1.5 -- gd Input Capacitance C -- 540 -- iss V = -30V, V = 0V, DS GS pF Output Capacitance C -- 60 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 30 -- rss c Switching Turn-On Delay Time t -- -- d(on) 7 V = -15V, R = 15, DD L Turn-On Rise Time t -- 9 -- r I = -1A, V = -10V, nS D GEN Turn-Off Delay Time t -- 19 -- d(off) R = 6 G Turn-Off Fall Time t -- 4 -- f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. Document Number: DS P0000153 2 Version: C15