X-On Electronics has gained recognition as a prominent supplier of IRF7342TRPBF MOSFET across the USA, India, Europe, Australia, and various other global locations. IRF7342TRPBF MOSFET are a product manufactured by TECH PUBLIC. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

IRF7342TRPBF TECH PUBLIC

IRF7342TRPBF electronic component of TECH PUBLIC
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See Product Specifications
Part No.IRF7342TRPBF
Manufacturer: TECH PUBLIC
Category: MOSFET
Description: SOIC-8 MOSFETs ROHS
Datasheet: IRF7342TRPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5007 ea
Line Total: USD 0.5

Availability - 17319
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16683
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 0.384
10 : USD 0.3377
30 : USD 0.3175
100 : USD 0.2916
500 : USD 0.2677
1000 : USD 0.2603

   
Manufacturer
Product Category
Package
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We are delighted to provide the IRF7342TRPBF from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF7342TRPBF and other electronic components in the MOSFET category and beyond.

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ATIONSThe IRF7342TRPBF is an SOIC-8 MOSFETs manufactured by Tech Publications. This MOSFET is of the N-CHANNEL type and has a Trench Gate design. It has a maximum Drain to Source Voltage (Vdss) of 57 V and a maximum Drain Current (Id) of 2.6A. It has a Drain to Source On-resistance (Rds) of 0.018 O and an input capacitance (Ciss) of 557 pF. This MOSFET has a low gate to source threshold voltage (Vgs) of 4 V. It is manufactured using the advanced process making it suitable for a wide variety of applications. It is ROHS compliant and can be used in both commercial and industrial applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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