X-On Electronics has gained recognition as a prominent supplier of IRF7342TRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF7342TRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF7342TRPBF Infineon

Name: IRF7342TRPBF
Brand: Infineon
SKU: IRF7342TRPBF_Infineon
Availability: InStock
Rating: 5 (11 reviews)

Hot

IRF7342TRPBF electronic component of Infineon

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See Product Specifications

Part No.	IRF7342TRPBF
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET 2 P Channel (Dual) 55V 3.4A 1V @ 250uA 105 mÎ© @ 3.4A,10V SOIC-8_150mil RoHS
Datasheet:	IRF7342TRPBF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.737 ea
Line Total: USD 0.74

Availability - 3589
Ship by Mon. 09 Dec to Thu. 12 Dec

MOQ: 1 Multiples: 1
Pack Size: 1

IRF7342TRPBF More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

3880

Ship by Mon. 02 Dec to Fri. 06 Dec

MOQ : 4000
Multiples : 4000

4000 : USD 0.5265
8000 : USD 0.5265

3589

Ship by Mon. 09 Dec to Thu. 12 Dec

MOQ : 1
Multiples : 1

1 : USD 0.737
10 : USD 0.6125
30 : USD 0.5485
100 : USD 0.4863
500 : USD 0.3902
1000 : USD 0.3714

30756

Ship by Thu. 28 Nov to Mon. 02 Dec

MOQ : 1
Multiples : 1

1 : USD 1.309
10 : USD 0.9328
100 : USD 0.6886
500 : USD 0.5753
1000 : USD 0.5324
2000 : USD 0.5247
4000 : USD 0.5137

14045

Ship by Thu. 28 Nov to Mon. 02 Dec

MOQ : 1
Multiples : 1

1 : USD 1.386
10 : USD 1.0024
36 : USD 0.4732
98 : USD 0.4466

Specifications

Manufacturer
Infineon Infineon

Product Category
MOSFETs MOSFETs

RoHS - XON
Y Y

Id - Continuous Drain Current
3.4 A 3.4 A

Vds - Drain-Source Breakdown Voltage
55 V 55 V

Rds On - Drain-Source Resistance
105 mOhms 105 mOhms

Transistor Polarity
P - Channel P - Channel

Pd - Power Dissipation
2 W 2 W

Mounting Style
Smd/Smt Smd/Smt

Package / Case
SOIC - 8 SOIC - 8

Packaging
Reel Reel

Technology
Si Si

Number of Channels
2 Channel 2 Channel

Vgs - Gate-Source Voltage
20 V 20 V

Qg - Gate Charge
26 nC 26 nC

Configuration
Dual Dual

Brand
Infineon Infineon

Continuous Drain Current
- 3.4 A - 3.4 A

Drain-Source Breakdown Voltage
- 55 V - 55 V

Gate-Source Breakdown Voltage
20 V 20 V

Power Dissipation
2 W 2 W

Rds On
105 Mohms 105 Mohms

Gate Charge Qg
26 nC 26 nC

Factory Pack Quantity :
4000 4000

Height
1.75 mm 1.75 mm

Length
4.9 mm 4.9 mm

Transistor Type
2 P - Channel 2 P - Channel

Width
3.9 mm 3.9 mm

Cnhts
8541210000 8541210000

Hts Code
8541290095 8541290095

Mxhts
85412999 85412999

Product Type
Mosfet Mosfet

Subcategory
Mosfets Mosfets

Taric
8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the IRF7342TRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF7342TRPBF and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IRF7342TRPBF is a dual p-channel MOSFET manufactured by Infineon. It is a surface mount device, with a lead pitch of 150 mil, and is RoHS compliant. The device has a breakdown voltage of 55V, a continuous drain current of 3.4A, a gate-source voltage of 1V and a RDSon of 105mO at 3.4A of drain-source voltage and 10V of gate-source voltage. It also features a very low gate threshold current of 250uA for on-state switching operation.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Availability	Price	Buy Price	Quantity
3880 Ship by Mon. 02 Dec to Fri. 06 Dec MOQ : 4000 Multiples : 4000	4000 : USD 0.5265 8000 : USD 0.5265

3589 Ship by Mon. 09 Dec to Thu. 12 Dec MOQ : 1 Multiples : 1	1 : USD 0.737 10 : USD 0.6125 30 : USD 0.5485 100 : USD 0.4863 500 : USD 0.3902 1000 : USD 0.3714

30756 Ship by Thu. 28 Nov to Mon. 02 Dec MOQ : 1 Multiples : 1	1 : USD 1.309 10 : USD 0.9328 100 : USD 0.6886 500 : USD 0.5753 1000 : USD 0.5324 2000 : USD 0.5247 4000 : USD 0.5137

14045 Ship by Thu. 28 Nov to Mon. 02 Dec MOQ : 1 Multiples : 1	1 : USD 1.386 10 : USD 1.0024 36 : USD 0.4732 98 : USD 0.4466

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