X-On Electronics has gained recognition as a prominent supplier of CSD16322Q5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. CSD16322Q5 MOSFETs are a product manufactured by Texas Instruments. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CSD16322Q5 Texas Instruments

Name: CSD16322Q5
Brand: Texas Instruments
SKU: CSD16322Q5_Texas_Instruments
Availability: OutOfStock
Rating: 5 (11 reviews)

CSD16322Q5 electronic component of Texas Instruments

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Part No.	CSD16322Q5
Manufacturer:	Texas Instruments
Category:	MOSFETs
Description:	N-Channel 25 V 21A (Ta), 97A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.2709 ea
Line Total: USD 1.27

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

CSD16322Q5 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 2500 Multiples : 2500	2500 : USD 0.6091 5000 : USD 0.5569 12500 : USD 0.5312

0 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 1 Multiples : 1	1 : USD 1.5008 10 : USD 1.1793 100 : USD 0.9176 500 : USD 0.7777 1000 : USD 0.6335

0 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 1 Multiples : 1	1 : USD 1.5008 10 : USD 1.1793 100 : USD 0.9176 500 : USD 0.7777 1000 : USD 0.6335

0 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 2500 Multiples : 2500	2500 : USD 0.5412

0 Ship by Fri. 14 Mar to Wed. 19 Mar MOQ : 1 Multiples : 1	1 : USD 1.2709 10 : USD 1.1221 30 : USD 0.9828 100 : USD 0.8797 500 : USD 0.8359 1000 : USD 0.8148

0 Ship by Wed. 05 Mar to Fri. 07 Mar MOQ : 1 Multiples : 1	1 : USD 2.8327 10 : USD 1.055 100 : USD 0.8012 500 : USD 0.6809 1000 : USD 0.5585 2500 : USD 0.5214

We are delighted to provide the CSD16322Q5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CSD16322Q5 and other electronic components in the MOSFETs category and beyond.

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HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

A/NSC may also be referenced as

NAT SEMI
NATIONAL SEMI
NATIONAL SEMICONDUCT
National Semiconductor
NS4
NSC
TEXAS
TEXAS INST
TEXAS INST / KLIXON
TEXAS INSTRUMENT
TEXAS INSTRUMENTS
TI
TI9

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Manufacturer Texas Instruments Texas Instruments
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 100 A 100 A
Vds - Drain-Source Breakdown Voltage 25 V 25 V
Rds On - Drain-Source Resistance 5.8 mOhms 5.8 mOhms
Transistor Polarity n - channel n - channel
Vgs th - Gate-Source Threshold Voltage 1.1 V 1.1 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 3.1 W 3.1 W
Mounting Style smd/smt smd/smt
Package / Case SON - 8 SON - 8
Packaging Reel Reel
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 10 V 10 V
Qg - Gate Charge 6.8 nC 6.8 nC
Tradename nexfet nexfet
Configuration single quad drain triple source single quad drain triple source
Series csd16322q5 csd16322q5
Brand Texas Instruments Texas Instruments
Continuous Drain Current 21 A 21 A
Drain-Source Breakdown Voltage 25 V 25 V
Forward Transconductance - Min 106 s 106 s
Gate-Source Breakdown Voltage - 8 v , + 10 V - 8 v , + 10 V
Power Dissipation 3.1 W 3.1 W
Rds On 4.6 mohms 4.6 mohms
Fall Time 3.7 ns 3.7 ns
Gate Charge Qg 6.8 nC 6.8 nC
Rise Time 10.7 ns 10.7 ns
Factory Pack Quantity : 2500 2500
Typical Turn-Off Delay Time 12.3 ns 12.3 ns
Height 1 mm 1 mm
Length 6 mm 6 mm
Transistor Type 1 n - channel 1 n - channel
Width 5 mm 5 mm
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85423999 85423999