X-On Electronics has gained recognition as a prominent supplier of 2SC5200-R(Q) Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. 2SC5200-R(Q) Bipolar Transistors - Pre-Biased are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

2SC5200-R(Q) Toshiba

2SC5200-R(Q) electronic component of Toshiba
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Part No.2SC5200-R(Q)
Manufacturer: Toshiba
Category: Bipolar Transistors - Pre-Biased
Description: Trans GP BJT NPN 230V 15A 3-Pin(3+Tab) TO-3PL
Datasheet: 2SC5200-R(Q) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
14: USD 2.5442 ea
Line Total: USD 35.62 
Availability - 0
MOQ: 14  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 14
Multiples : 1
14 : USD 2.5442
50 : USD 2.2479

   
Manufacturer
Product Category
Configuration
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Minimum Operating Temperature
Maximum Operating Temperature
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Emitter- Base Voltage Vebo
Brand
Collector-Emitter Saturation Voltage
Gain Bandwidth Product Ft
Maximum Dc Collector Current
Pd - Power Dissipation
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We are delighted to provide the 2SC5200-R(Q) from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SC5200-R(Q) and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 230 V CBO Collector-emitter voltage V 230 V CEO Emitter-base voltage V 5 V EBO Collector current I 15 A C Base current I 1.5 A B Collector power dissipation P 150 W C (T = 25C) c JEDEC Junction temperature T 150 C j JEITA Storage temperature range T 55 to 150 C stg TOSHIBA 2-21F1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling PrecautionsDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1994-09 1 2016-01-07 2SC5200 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 230 V, I = 0 A 5.0 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 A 5.0 A EBO EB C Collector-emitter breakdown voltage V I = 50 mA, I = 0 A 230 V (BR) CEO C B h FE (1) V = 5 V, I = 1 A 55 160 CE C DC current gain (Note) h V = 5 V, I = 7 A 35 60 FE (2) CE C Collector-emitter saturation voltage V I = 8 A, I = 0.8 A 0.4 3.0 V CE (sat) C B Base-emitter voltage V V = 5 V, I = 7 A 1.0 1.5 V BE CE C Transition frequency f V = 5 V, I = 1 A 30 MHz T CE C Collector output capacitance C V = 10 V, I = 0 A, f = 1 MHz 200 pF ob CB E Note: h classification R: 55 to 110, O: 80 to 160 FE (1) Marking Part No. (or abbreviation code) TOSHIBA 2SC5200 Lot No. JAPAN Note 2 Note: Printed only on devices manufactured in Japan Characteristics indicator Note 2 : A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2016-01-07

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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