X-On Electronics has gained recognition as a prominent supplier of RN1102MFV,L3F Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. RN1102MFV,L3F Bipolar Transistors - Pre-Biased are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

RN1102MFV,L3F Toshiba

RN1102MFV,L3F electronic component of Toshiba
RN1102MFV,L3F Toshiba
RN1102MFV,L3F Bipolar Transistors - Pre-Biased
RN1102MFV,L3F  Semiconductors

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See Product Specifications
Part No. RN1102MFV,L3F
Manufacturer: Toshiba
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Datasheet: RN1102MFV,L3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.0473 ea
Line Total: USD 378.4 
Availability - 23280
Ship by Thu. 09 Jan to Wed. 15 Jan
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
3666
Ship by Thu. 09 Jan to Wed. 15 Jan
MOQ : 285
Multiples : 1
285 : USD 0.2399
466 : USD 0.1463
471 : USD 0.1448
1082 : USD 0.0631
1094 : USD 0.0624
1104 : USD 0.0619
1244 : USD 0.0549
3000 : USD 0.0478

7760
Ship by Thu. 09 Jan to Wed. 15 Jan
MOQ : 8000
Multiples : 8000
8000 : USD 0.0473
16000 : USD 0.0431
24000 : USD 0.0408
40000 : USD 0.0381
56000 : USD 0.0366
80000 : USD 0.035
200000 : USD 0.0317
400000 : USD 0.0307

7724
Ship by Thu. 16 Jan to Tue. 21 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0629
100 : USD 0.0514
300 : USD 0.0459
1000 : USD 0.0416
5000 : USD 0.0382
8000 : USD 0.0365

3666
Ship by Thu. 09 Jan to Wed. 15 Jan
MOQ : 1082
Multiples : 1
1082 : USD 0.0631
1094 : USD 0.0624
1104 : USD 0.0619
1244 : USD 0.0549
3000 : USD 0.0478

23280
Ship by Thu. 09 Jan to Wed. 15 Jan
MOQ : 8000
Multiples : 8000
8000 : USD 0.0473
16000 : USD 0.0431
24000 : USD 0.0408
40000 : USD 0.0381
56000 : USD 0.0366
80000 : USD 0.035
200000 : USD 0.0317
400000 : USD 0.0307

   
Manufacturer
Product Category
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RN1102MFV,L3F from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RN1102MFV,L3F and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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The RN1102MFV,L3F with Bipolar Transistors is a pre-biased bias resistor built-in transistor manufactured by Toshiba. It is a NPN silicon epitaxial planar transistor with a built-in bias resistors. It is a surface-mount package with dimensions of 2.9mm × 1.6mm × 1.2mm. It has a maximum allowable collector to emitter voltage of 45V, a maximum current gain of 200 and a maximum collector current of 500mA. It is also rated for a maximum power dissipation of 1.5W and has a maximum junction temperature of 150 degrees Celsius. The package is suitable for high-density mounting. It has a high collector-base voltage withstand and a low collector-emitter saturation voltage. The high-speed switching performance and its ability to address space constraints make it ideal for consumer and industrial automation applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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