X-On Electronics has gained recognition as a prominent supplier of RN1102MFV,L3F Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. RN1102MFV,L3F Bipolar Transistors - Pre-Biased are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

RN1102MFV,L3F Toshiba

RN1102MFV,L3F electronic component of Toshiba
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See Product Specifications
Part No.RN1102MFV,L3F
Manufacturer: Toshiba
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Datasheet: RN1102MFV,L3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
244: USD 0.0329 ea
Line Total: USD 8.03 
Availability - 3666
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 244  Multiples: 1
Pack Size: 1
Availability Price Quantity
3666
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1911
10 : USD 0.1231
25 : USD 0.1219
100 : USD 0.0632
250 : USD 0.0625
500 : USD 0.062
1000 : USD 0.046
3000 : USD 0.0329

15520
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 8000
Multiples : 8000
8000 : USD 0.0381
24000 : USD 0.0343

3666
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 244
Multiples : 1
244 : USD 0.0329

15520
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 8000
Multiples : 8000
8000 : USD 0.0381

   
Manufacturer
Product Category
Transistor Polarity
Typical Input Resistor
Typical Resistor Ratio
Mounting Style
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
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Emitter- Base Voltage Vebo
Brand
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RN1102MFV,L3F from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RN1102MFV,L3F and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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The RN1102MFV,L3F with Bipolar Transistors is a pre-biased bias resistor built-in transistor manufactured by Toshiba. It is a NPN silicon epitaxial planar transistor with a built-in bias resistors. It is a surface-mount package with dimensions of 2.9mm × 1.6mm × 1.2mm. It has a maximum allowable collector to emitter voltage of 45V, a maximum current gain of 200 and a maximum collector current of 500mA. It is also rated for a maximum power dissipation of 1.5W and has a maximum junction temperature of 150 degrees Celsius. The package is suitable for high-density mounting. It has a high collector-base voltage withstand and a low collector-emitter saturation voltage. The high-speed switching performance and its ability to address space constraints make it ideal for consumer and industrial automation applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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