RN1106,LF(CT Toshiba

RN1101RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101, RN1102, RN1103 RN1104, RN1105, RN1106 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplified circuit design z Reduced number of parts and simplified manufacturing process z Complementary to RN2101 to RN2106 Equivalent Circuit and Bias Resister Values Type No. R1 (k ) R2 (k ) RN1101 4.7 4.7 RN1102 10 10 RN1103 22 22 RN1104 47 47 RN1105 2.2 47 JEDEC RN1106 4.7 47 JEITA TOSHIBA 2-2H1A Weight: 2.4 mg (typ). Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1101 to 1106 Collector-emitter voltage V 50 V CEO RN1101 to 1104 10 Emitter-base voltage V V EBO RN1105, 1106 5 Collector current I 100 mA C Collector power dissipation P 100 mW C RN1101 to 1106 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1990-12 1 2014-03-01 RN1101RN1106 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit I V = 50 V, I = 0 100 CBO CB E Collector cut-off RN1101 to 1106 nA current I V = 50 V, I = 0 500 CEO CE B RN1101 0.82 1.52 RN1102 0.38 0.71 V = 10 V, I = 0 EB C RN1103 0.17 0.33 Emitter cut-off current I mA EBO RN1104 0.082 0.15 RN1105 0.078 0.145 V = 5 V, I = 0 EB C RN1106 0.074 0.138 RN1101 30 RN1102 50 RN1103 70 DC current gain h V = 5 V, I = 10 mA FE CE C RN1104 80 RN1105 80 RN1106 80 Collector-emitter RN1101 to 1106 V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B saturation voltage RN1101 1.1 2.0 RN1102 1.2 2.4 RN1103 1.3 3.0 Input voltage (ON) V V = 0.2 V, I = 5 mA V I (ON) CE C RN1104 1.5 5.0 RN1105 0.6 1.1 RN1106 0.7 1.3 RN1101 to 1104 1.0 1.5 Input voltage (OFF) V V = 5 V, I = 0.1 mA V I (OFF) CE C 0.5 0.8 RN1105, 1106 Transition frequency RN1101 to 1106 f V = 10 V, I = 5 mA 250 MH T CE C z Collector output V = 10 V, I = 0, CB E RN1101 to 1106 C 3 6 pF ob capacitance f = 1 MH z RN1101 3.29 4.7 6.11 RN1102 7 10 13 RN1103 15.4 22 28.6 Input resistor R1 k RN1104 32.9 47 61.1 RN1105 1.54 2.2 2.86 RN1106 3.29 4.7 6.11 RN1101 to 1104 0.9 1.0 1.1 Resistor ratio R1/R2 0.0421 0.0468 0.0515 RN1105 RN1106 0.09 0.1 0.11 2 2014-03-01