RN1107CT ~ RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107CT, RN1108CT, RN1109CT Switching Applications Unit: mm Inverter Circuit Applications 0 .60.05 Interface Circuit Applications 0 .50.03 Driver Circuit Applications Incorporating a bias resistor into a transistor reduces the number of parts, which enable the manufacture of ever more compact equipment and saves assembly cost. Complementary to RN2107CT to RN2109CT 0.35 0 .0 2 0.0 5 0 .0 3 0.1 5 0 .0 3 Equivalent Circuit and Bias Resistor Values C Type No. R1 (k ) R2 (k ) 1.BASE RN1107CT 10 47 R1 2.EMITTER B RN1108CT 22 47 CST3 3.COLLECTOR RN1109CT 47 22 JEDEC E JEITA TOSHIBA 2-1J1A Weight: 0.75 mg (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 20 V CBO RN1107CT to RN1109CT Collector-emitter voltage V 20 V CEO RN1107CT 6 Emitter-base voltage V V RN1108CT 7 EBO RN1109CT 15 Collector current I 50 mA C Collector power dissipation P 50 mW C RN1107CT to RN1109CT Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2004-10 1 2014-03-01 R2 1.00.05 0.250.03 0.250.03 0.650.02 +0.02 0.38 0.050.03 -0.03RN1107CT ~ RN1109CT Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit I V = 20 V, I = 0 100 CBO CB E Collector cut-off current RN1107CT to 1109CT nA I V = 20 V, I = 0 500 CEO CE B RN1107CT V = 6 V, I = 0 0.088 0.131 EB C Emitter cut-off current I mA RN1108CT V = 7 V, I = 0 0.085 0.126 EBO EB C RN1109CT V = 15 V, I = 0 0.182 0.271 EB C RN1107CT 120 DC current gain RN1108CT h V = 5 V, I = 10 mA FE CE C 120 RN1109CT 100 Collector-emitter RN1107CT to 1109CT V I = 5 mA, I = 0.25 mA V CE (sat) C B 0.15 saturation voltage RN1107CT 0.7 1.5 Input voltage (ON) RN1108CT V V = 0.2 V, I = 5 mA V I (ON) CE C 0.8 2.2 RN1109CT 1.6 5.0 RN1107CT 0.5 1.0 Input voltage (OFF) RN1108CT V V = 5 V, I = 0.1 mA V I (OFF) CE C 0.6 1.1 RN1109CT 1.3 2.6 Collector output V = 10 V, I = 0, CB E RN1107CT to 1109CT C pF 1.2 ob capacitance f = 1 MHz RN1107CT 8 10 12 Input resistor RN1108CT R1 k 17.6 22 26.4 RN1109CT 37.6 47 56.4 RN1107CT 0.17 0.213 0.255 Resistor ratio RN1108CT R1/R2 0.374 0.468 0.562 RN1109CT 1.71 2.14 2.56 2 2014-03-01