RN1107MFV to RN1109MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1107MFV, RN1108MFV, RN1109MFV Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2107MFV to RN2109MFV Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN1107MFV 10 47 RN1108MFV 22 47 1.BASE RN1109MFV 47 22 2.EMITTER VESM 3.COLLECTOR JEDEC JEITA TOSHIBA 1-1Q1S Absolute Maximum Ratings (Ta = 25C) Weight: 1.5 mg (typ.) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1107MFV to RN1109MFV Collector-emitter voltage V 50 V CEO RN1107MFV 6 RN1108MFV 7 Emitter-base voltage V V EBO RN1109MFV 15 Collector current I 100 mA C RN1107MFV Collector power dissipation P (Note 1) 150 mW C to Junction temperature T 150 C j RN1109MFV Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm) Land Pattern Dimensions (for reference only) 0.5 Unit mm 0.45 1.15 0.4 0.45 Start of commercial production 2005-02 0.4 0.4 2016-2018 2018-12-21 1 Toshiba Electronic Devices & Storage Corporation RN1107MFV to RN1109MFV Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 A 100 nA CBO CB E Collector cutoff current RN1107MFV to RN1109MFV I V = 50 V, I = 0 A 500 nA CEO CE B RN1107MFV VEB = 6 V, IC = 0 A 0.081 0.15 Emitter cutoff current RN1108MFV I V = 7 V, I = 0 A 0.078 0.145 mA EBO EB C RN1109MFV V = 15 V, I = 0 A 0.167 0.311 EB C RN1107MFV 80 DC current gain RN1108MFV hFE VCE = 5 V, IC = 10 mA 80 RN1109MFV 70 Collector-emitter saturation V CE RN1107MFV to RN1109MFV IC = 5 mA, IB = 0.5 mA 0.1 0.3 V voltage (sat) RN1107MFV 0.7 1.8 Input voltage (ON) RN1108MFV V V = 0.2 V, I = 5 mA 1.0 2.6 V I (ON) CE C RN1109MFV 2.2 5.8 RN1107MFV 0.5 1.0 Input voltage (OFF) RN1108MFV V V = 5 V, I = 0.1 mA 0.6 1.16 V I (OFF) CE C RN1109MFV 1.5 2.6 Collector output V = 10 V, I = 0 A, CB E RN1107MFV to RN1109MFV C 0.7 pF ob capacitance f = 1 MHz RN1107MFV 7 10 13 Input resistor RN1108MFV R1 15.4 22 28.6 k RN1109MFV 32.9 47 61.1 RN1107MFV 0.17 0.213 0.255 Resistor ratio R1/R2 0.374 0.468 0.562 RN1108MFV RN1109MFV 1.71 2.14 2.56 2016-2018 2018-12-21 2 Toshiba Electronic Devices & Storage Corporation