RN1107MFV to RN1109MFV Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1107MFV/08MFV/09MFV 1. Applications Switching Inverter Circuits Interfacing Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (5) Complementary to RN2107MFV to 2109MFV 3. Equivalent Circuit 4. Bias Resistor Values Part No. R1 (k) R2 (k) RN1107MFV 10 47 RN1108MFV 22 47 RN1109MFV 47 22 Start of commercial production 2005-02 2021 2021-08-18 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0RN1107MFV to RN1109MFV 5. Packaging and Pin Assignment 1: Base 2: Emitter 3: Collector VESM 6. Orderable part number Orderable part number AEC-Q101 Note Note RN1107MFV RN1107MFV,L3F General Use RN1107MFV,L3XGF YES (Note 1) Unintended Use (Note 1) RN1107MFV,L3XHF YES Automotive Use RN1108MFV RN1108MFV,L3F General Use RN1108MFV,L3XGF YES (Note 1) Unintended Use (Note 1) RN1109MFV RN1109MFV,L3F General Use RN1109MFV,L3XGF YES (Note 1) Unintended Use (Note 1) Note 1: For more information, please contact our sales or use the inquiry form on our website. 7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Collector-base voltage RN1107MFVRN1109MFV V 50 V CBO Collector-emitter voltage V 50 CEO Emitter-base voltage RN1107MFV V 6 V EBO RN1108MFV 7 RN1109MFV 15 Collector current RN1107MFVRN1109MFV I 100 mA C Collector power dissipation P (Note 1) 150 mW C Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm) 2021 2021-08-18 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0