RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1110, RN1111 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2110 and RN2111 Equivalent Circuit SSM Absolute Maximum Ratings (Ta = 25C) JEDEC Characteristic Symbol Rating Unit JEITA TOSHIBA 2-2H1A Collector-base voltage V 50 V CBO Weight: 2.4mg (typ.) Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C Collector power dissipation P 100 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1990-12 1 2014-03-01 RN1110,RN1111 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current I V = 50 V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 0.1 A EBO EB C DC current gain h V = 5 V, I = 1 mA 120 700 FE CE C Collector-emitter saturation voltage V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B Transition frequency f V = 10 V, I = 5 mA 250 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MH 3 6 pF ob CB E z RN1110 3.29 4.7 6.11 Input resistor R1 k RN1111 7 10 13 2 2014-03-01