RN1112MFV, RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2112MFV, RN2113MFV Equivalent Circuit 1.BASE 2.EMITTER VESM 3.COLLECTOR JEDEC JEITA Absolute Maximum Ratings (Ta = 25C) TOSHIBA 1-1Q1S Weight: 1.5 mg (typ.) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C Collector power dissipation P (Note 1) 150 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm) Land Pattern Dimensions (for reference only) 0.5 Unit mm 0.45 1.15 0.4 0.45 Start of commercial production 0.4 0.4 2005-02 2016-2019 2019-01-07 1 Toshiba Electronic Devices & Storage Corporation RN1112MFV, RN1113MFV Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current I V = 50 V, I = 0 A 100 nA CBO CB E Emitter cutoff current I V = 5 V, I = 0 A 100 nA EBO EB C DC current gain h V = 5 V, I = 1 mA 120 700 FE CE C Collector-emitter saturation voltage V I = 5 mA, I = 0.5 mA 0.1 0.3 V CE (sat) C B Collector output capacitance Cob VCB = 10 V, IE = 0 A, f = 1 MHz 0.7 pF RN1112MFV 15.4 22 28.6 Input resistor R1 k RN1113MFV 32.9 47 61.1 2016-2019 2019-01-07 2 Toshiba Electronic Devices & Storage Corporation