RN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114, RN1115, RN1116, RN1117, RN1118 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications z With built-in bias resistors. z Simplified circuit design z Reduced number of parts and simplified manufacturing process z Complementary to RN2114 to 2118 Equivalent Circuit and Bias Resistor Values Type No. R (k )R (k ) 1 2 RN1114 1 10 RN1115 2.2 10 RN1116 4.7 10 RN1117 10 4.7 RN1118 47 10 JEDEC JEITA TOSHIBA 2-2H1A Weight: 2.4mg (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1114 to 1118 Collector-emitter voltage V 50 V CEO RN1114 5 RN1115 6 Emitter-base voltage RN1116 7 V V EBO RN1117 15 RN1118 25 Collector current I 100 mA C Collector power dissipation P 100 mW C RN1114 to 1118 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1994-08 1 2014-03-01 RN1114~RN1118 Electrical Characteristics (Ta = 25 C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit RN1114 to 1118 I V = 50 V, I = 0 100 nA CBO CB E Collector cut-off current RN1114 to 1118 I V = 50 V, I = 0 500 nA CEO CE B RN1114 V = 5 V, I = 0 0.35 0.65 EB C RN1115 V = 6 V, I = 0 0.37 0.71 EB C Emitter cut-off current RN1116 I V = 7 V, I = 0 0.36 0.68 mA EBO EB C RN1117 V = 15 V, I = 0 0.78 1.46 EB C RN1118 V = 25 V, I = 0 0.33 0.63 EB C RN1114 to 16, 18 50 DC current gain h V = 5 V, I = 10 mA FE CE C RN1117 30 Collector-emitter RN1114 to 1118 V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B saturation voltage RN1114 0.6 2.0 RN1115 0.7 2.5 Input voltage (ON) V V = 0.2 V, I = 5 mA V RN1116 0.8 2.5 I (ON) CE C RN1117 1.5 3.5 RN1118 2.5 10.0 RN1114 0.3 0.9 RN1115 0.3 1.0 Input voltage (OFF) RN1116 V 0.3 V = 5 V, I = 0.1 mA 1.1 V I (OFF) CE C RN1117 0.3 2.3 RN1118 0.5 5.7 Transition frequency RN1114 to 1118 f V = 10 V, I = 5 mA 250 MHz T CE C Collector output V = 10 V, I = 0, CB E RN1114 to 1118 C 3.0 6.0 pF ob capacitance f = 1 MHz RN1114 0.7 1.0 1.3 RN1115 1.54 2.2 2.86 Input Resistor R k RN1116 3.29 4.7 6.11 1 RN1117 7.0 10.0 13.0 RN1118 32.9 47.0 61.1 RN1114 0.1 RN1115 0.22 Resistor Ratio R /R RN1116 0.47 1 2 RN1117 2.13 RN1118 4.7 2 2014-03-01