RN1114MFV to RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV Switching Applications Unit: mm Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114MFV to RN2118MFV Equivalent Circuit and Bias Resister Values Type No. R1 (k ) R2 (k ) RN1114MFV 1 10 RN1115MFV 2.2 10 1.BASE RN1116MFV 4.7 10 2.EMITTER RN1117MFV 10 4.7 VESM 3.COLLECTOR RN1118MFV 47 10 JEDEC JEITA TOSHIBA 1-1Q1S Weight: 1.5 mg (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Land Pattern Dimensions Collector-base voltage VCBO 50 V RN1114MFV (for reference only) to 1118MFV Collector-emitter voltage V 50 V CEO Unit: mm RN1114MFV 5 0.5 RN1115MFV 6 0.45 Emitter-base voltage RN1116MFV VEBO 7 V RN1117MFV 15 1.15 0.4 RN1118MFV 25 0.45 Collector current I 100 mA C Collector power dissipation PC (Note 1) 150 mW RN1114MFV 0.4 0.4 to 111M8FV Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm 25.4 mm 1.6 mm) Start of commercial production 2005-09 2016-2020 2020-11-17 1 Toshiba Electronic Devices & Storage Corporation RN1114MFV to RN1118MFV Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50V, I = 0A 100 CBO CB E RN1114MFV Collector cut-off nA current to 1118MFV ICEO VCE = 50V, IB = 0A 500 RN1114MFV V = 5V, I = 0A 0.35 0.65 EB C RN1115MFV V = 6V, I = 0A 0.37 0.71 EB C Emitter cut-off current RN1116MFV I V = 7V, I = 0A 0.36 0.68 mA EBO EB C RN1117MFV V = 15V, I = 0A 0.78 1.46 EB C RN1118MFV V = 25V, I = 0A 0.33 0.63 EB C RN1114MFV 50 to 16MFV, 18MFV DC current gain h V = 5V, I = 10mA FE CE C RN1117MFV 30 RN1114MFV Collector-emitter V I = 5mA, I = 0.5mA 0.1 0.3 V CE (sat) C B saturation voltage to 1118MFV RN1114MFV 0.6 2.0 RN1115MFV 0.7 2.5 Input voltage (ON) RN1116MFV V V = 0.2V, I = 5mA 0.8 2.5 V I (ON) CE C RN1117MFV 1.5 3.5 RN1118MFV 2.5 10.0 RN1114MFV 0.3 0.9 RN1115MFV 0.3 1.0 Input voltage (OFF) RN1116MFV VI (OFF) VCE = 5V, IC = 0.1mA 0.3 1.1 V RN1117MFV 0.3 2.3 RN1118MFV 0.5 5.7 RN1114MFV Transition frequency f V = 10V, I = 5mA 250 T CE C MHz to 1118MFV RN1114MFV Collector Output V = 10V, I = 0A, CB E C 0.7 pF ob capacitance f = 1MH to 1118MFV z RN1114MFV 0.7 1.0 1.3 1.54 2.2 2.86 RN1115MFV Input resistor RN1116MFV R1 3.29 4.7 6.11 k 7 10 13 RN1117MFV RN1118MFV 32.9 47 61.1 RN1114MFV 0.1 RN1115MFV 0.22 Resistor ratio RN1116MFV R1/R2 0.47 RN1117MFV 2.13 RN1118MFV 4.7 2016-2020 2020-11-17 2 Toshiba Electronic Devices & Storage Corporation