RN1301 to RN1306 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1301, RN1302, RN1303 RN1304, RN1305, RN1306 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN2301 to RN2306 Equivalent Circuit and Bias Resistor Values Part No. R1 (k ) R2 (k ) RN1301 4.7 4.7 RN1302 10 10 USM RN1303 22 22 RN1304 47 47 JEDEC JEITA SC-70 RN1305 2.2 47 TOSHIBA 2-2E1A RN1306 4.7 47 Weight: 6 mg (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1301 to RN1306 Collector-emitter voltage V 50 V CEO RN1301 to RN1304 10 Emitter-base voltage V V EBO RN1305, RN1306 5 Collector current I 100 mA C Collector power dissipation P 100 mW C RN1301 to RN1306 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1987-09 2019 2019-08-19 1 Toshiba Electronic Devices & Storage Corporation RN1301 to RN1306 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit I V = 50 V, I = 0 mA 100 CBO CB E Collector cut-off current RN1301 to 1306 nA ICEO VCE = 50 V, IB = 0 mA 500 RN1301 0.82 1.52 RN1302 0.38 0.71 V = 10 V, I = 0 mA EB C RN1303 0.17 0.33 Emitter cut-off current IEBO mA RN1304 0.082 0.15 RN1305 0.078 0.145 VEB = 5 V, IC = 0 mA RN1306 0.074 0.138 RN1301 30 RN1302 50 RN1303 70 DC current gain h V = 5 V, I = 10 mA FE CE C RN1304 80 RN1305 80 RN1306 80 Collector-emitter I = 5 mA, C RN1301 to RN1306 V 0.1 0.3 V CE (sat) saturation voltage I = 0.25 mA B RN1301 1.1 2.0 RN1302 1.2 2.4 RN1303 1.3 3.0 Input voltage (ON) V V = 0.2 V, I = 5 mA V I (ON) CE C RN1304 1.5 5.0 RN1305 0.6 1.1 RN1306 0.7 1.3 RN1301 to RN1304 1.0 1.5 Input voltage (OFF) V V = 5 V, I = 0.1 mA V I (OFF) CE C RN1305, RN1306 0.5 0.8 Transition frequency RN1301 to RN1306 f V = 10 V, I = 5 mA 250 MHz T CE C Collector output V = 10 V, I = 0 mA, CB E RN1301 to RN1306 Cob 3 6 pF capacitance f = 1 MHz RN1301 3.29 4.7 6.11 RN1302 7 10 13 RN1303 15.4 22 28.6 Input resistor R1 k RN1304 32.9 47 61.1 RN1305 1.54 2.2 2.86 RN1306 3.29 4.7 6.11 RN1301 to RN1304 0.9 1.0 1.1 Resistor ratio RN1305 R1/R2 0.0421 0.0468 0.0515 RN1306 0.09 0.1 0.11 2019 2019-08-19 2 Toshiba Electronic Devices & Storage Corporation