RN1307 to RN1309 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1307, RN1308, RN1309 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2307 to RN2309 Equivalent Circuit and Bias Resistor Values Type No. R1 (k ) R2 (k ) RN1307 10 47 RN1308 22 47 RN1309 47 22 USM JEDEC JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006g (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO RN1307 6 Emitter-base voltage RN1308 V 7 V EBO RN1309 15 Collector current I 100 mA C Collector power dissipation P 100 mW C Junction temperature T 150 C j Storage temperature range T -55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1988-04 1 2017-01-06 RN1307 to RN1309 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 A 100 CBO CB E Collector cut-off current nA I V = 50 V, I = 0 A 500 CEO CE B RN1307 V = 6 V, I = 0 A 0.081 0.15 EB C Emitter cut-off current RN1308 I V = 7 V, I = 0 A 0.078 0.145 mA EBO EB C RN1309 V = 15 V, I = 0 A 0.167 0.311 EB C RN1307 80 DC current gain RN1308 h V = 5 V, I = 10 mA 80 FE CE C RN1309 70 Collector-emitter saturation voltage V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE(sat) C B RN1307 0.7 1.8 Input voltage (ON) RN1308 V V = 0.2 V, I = 5 mA 1.0 2.6 V I (ON) CE C RN1309 2.2 5.8 RN1307 0.5 1.0 Input voltage (OFF) RN1308 V V = 5 V, I = 0.1 mA 0.6 1.16 V I (OFF) CE C RN1309 1.5 2.6 Translation frequency f V = 10 V, I = 5 mA 250 MHz T CE C Collector output capacitance C 3 6 pF ob V = 10 V, I = 0 A, f = 1 MHz CB E RN1307 7 10 13 Input resistor RN1308 R1 15.4 22 28.6 k RN1309 32.9 47 61.1 RN1307 0.191 0.213 0.232 Resistor ratio RN1308 R1 / R2 0.421 0.468 0.515 RN1309 1.92 2.14 2.35 2 2017-01-06