RN1314 to RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1314, RN1315, RN1316 RN1317, RN1318 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN2314 to RN2318 Equivalent Circuit and Bias Resistor Values Part No. R1 (k ) R2 (k ) RN1314 1 10 RN1315 2.2 10 USM RN1316 4.7 10 JEDEC RN1317 10 4.7 JEITA SC-70 RN1318 47 10 TOSHIBA 2-2E1A Weight: 0.006g (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1314 to RN1318 Collector-emitter voltage V 50 V CEO RN1314 5 RN1315 6 Emitter-base voltage RN1316 V 7 V EBO RN1317 15 RN1318 25 Collector current IC 100 mA Collector power dissipation P 100 mW C RN1314 to RN1318 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2002-11 2019 2019-08-19 1 Toshiba Electronic Devices & Storage Corporation RN1314 to RN1318 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit RN1314 to 1318 I V = 50 V, I = 0 mA 100 nA CBO CB E Collector cut-off current RN1314 to 1318 ICEO VCE = 50 V, IB = 0 mA 500 nA RN1314 V = 5 V, I = 0 mA 0.35 0.65 EB C RN1315 V = 6 V, I = 0 mA 0.37 0.71 EB C Emitter cut-off current RN1316 I V = 7 V, I = 0 mA 0.36 0.68 mA EBO EB C RN1317 V = 15 V, I = 0 mA 0.78 1.46 EB C RN1318 V = 25 V, I = 0 mA 0.33 0.63 EB C RN1314 to 16,18 50 DC current gain h V = 5 V, I = 10 mA FE CE C RN1317 30 Collector-emitter RN1314 to 1318 V I = 5 mA, I = 0.25 mA 0.1 0.3 CE (sat) C B V saturation voltage RN1314 0.6 2.0 0.7 2.5 RN1315 Input voltage (ON) RN1316 V V = 0.2 V, I = 5 mA 0.8 2.5 V I (ON) CE C 1.5 3.5 RN1317 RN1318 2.5 10.0 0.3 0.9 RN1314 RN1315 0.3 1.0 Input voltage (OFF) V V = 5 V, I = 0.1 mA 0.3 1.1 RN1316 I (OFF) CE C V RN1317 0.3 2.3 0.5 5.7 RN1318 Transition frequency RN1314 to 1318 f V = 10 V, I = 5 mA 250 T CE C MHz Collector Output V = 10 V, I = 0 mA, CB E RN1314 to 1318 C 3.0 6.0 ob pF capacitance f = 1 MHz RN1314 0.7 1.0 1.3 1.54 2.2 2.86 RN1315 Input resistor RN1316 R 3.29 4.7 6.11 k 1 7.0 10.0 13.0 RN1317 RN1318 32.9 47.0 61.1 0.1 RN1314 RN1315 0.22 Resistor ratio R /R 0.47 RN1316 1 2 RN1317 2.13 4.7 RN1318 2019 2019-08-19 2 Toshiba Electronic Devices & Storage Corporation