RN1405(TE85L,F) Toshiba

RN1401RN1406 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1401, RN1402, RN1403 RN1404, RN1405, RN1406 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplified circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN2401 to RN2406 Equivalent Circuit and Bias Resistor Values Type No. R1 (k R2 (k RN1401 4.7 4.7 RN1402 10 10 RN1403 22 22 RN1404 47 47 JEDEC TO-236MOD RN1405 2.2 47 JEITA SC-59 RN1406 4.7 47 TOSHIBA 2-3F1A Weight: 0.012g (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1401 to 1406 Collector-emitter voltage V 50 V CEO RN1401 to 1404 10 Emitter-base voltage V V EBO RN1405, 1406 5 Collector current I 100 mA C Collector power dissipation P 200 mW C RN1401 to 1406 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1983-06 1 2014-03-01 RN1401RN1406 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit I V = 50 V, I = 0 100 CBO CB E Collector cut-off RN1401 to 1406 nA current I V = 50 V, I = 0 500 CEO CE B RN1401 0.82 1.52 RN1402 0.38 0.71 V = 10 V, I = 0 EB C RN1403 0.17 0.33 Emitter cut-off current I mA EBO RN1404 0.082 0.15 RN1405 0.078 0.145 V = 5 V, I = 0 EB C RN1406 0.074 0.138 RN1401 30 RN1402 50 RN1403 70 DC current gain h V = 5 V, I = 10 mA FE CE C RN1404 80 RN1405 80 RN1406 80 Collector-emitter V I = 5 mA, I = 0.25 mA 0.1 0.3 RN1401 to 1406 V CE (sat) C B saturation voltage RN1401 1.1 2.0 RN1402 1.2 2.4 RN1403 1.3 3.0 Input voltage (ON) V V = 0.2 V, I = 5 mA V I (ON) CE C RN1404 1.5 5.0 RN1405 0.6 1.1 RN1406 0.7 1.3 RN1401 to 1404 1.0 1.5 Input voltage (OFF) V V = 5 V, I = 0.1 mA V I (OFF) CE C 0.5 0.8 RN1405, 1406 Transition frequency RN1401 to 1406 f V = 10 V, I = 5 mA 250 MHz T CE C Collector Output V = 10 V, I = 0, CB E C 3 6 RN1401 to 1406 pF ob capacitance f = 1 MHz RN1401 3.29 4.7 6.11 RN1402 7 10 13 RN1403 15.4 22 28.6 Input resistor R1 k RN1404 32.9 47 61.1 RN1405 1.54 2.2 2.86 RN1406 3.29 4.7 6.11 RN1401 to 1404 0.9 1.0 1.1 Resistor ratio R1/R2 0.0421 0.0468 0.0515 RN1405 RN1406 0.09 0.1 0.11 2 2014-03-01