RN1407 RN1409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1407, RN1408, RN1409 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications z With built-in bias resistors z Simplified circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN2407 to RN2409 Equivalent Circuit and Bias Resistor Values Type No. R1 (k ) R2 (k ) RN1407 10 47 RN1408 22 47 RN1409 47 22 JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012g (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage RN1407 to 1409 V 50 V CBO Collector-emitter voltage RN1407 to 1409 V 50 V CEO RN1407 6 Emitter-base voltage V V RN1408 7 EBO RN1409 15 Collector current RN1407 to 1409 I 100 mA C Collector power dissipation RN1407 to 1409 P 200 mW C Junction temperature RN1407 to 1409 T 150 C j Storage temperature range RN1407 to 1409 T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1985-05 1 2014-03-01 RN1407 RN1409 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit I V = 50 V, I = 0 100 CBO CB E Collector cut-off RN1407 to 1409 nA current I V = 50 V, I = 0 500 CEO CE B RN1407 V = 6 V, I = 0 0.081 0.15 EB C Emitter cut-off current RN1408 VI = 7 V, I = 0 0.078 0.145 mA EBO EB C RN1409 V = 15 V, I = 0 0.167 0.311 EB C RN1407 80 DC current gain RN1408 80 h V = 5 V, I = 10 mA FE CE C RN1409 70 Collector-emitter V I = 5 mA, I = 0.25 mA 0.1 0.3 RN1407 to 1409 V CE (sat) C B saturation voltage RN1407 0.7 1.8 Input voltage (ON) RN1408 V V = 0.2 V, I = 5 mA 1.0 2.6 V I (ON) CE C RN1409 2.2 5.8 0.5 1.0 RN1407 Input voltage (OFF) RN1408 V V = 5 V, I = 0.1 mA 0.6 1.16 V I (OFF) CE C 1.5 2.6 RN1409 Transition frequency RN1407 to 1409 f V = 10 V, I = 5 mA 250 MHz T CE C Collector Output V = 10 V, I = 0, CB E C 3 6 RN1407 to 1409 pF ob capacitance f = 1 MH z RN1407 7 10 13 Input resistor RN1408 R1 15.4 22 28.6 k RN1409 32.9 47 61.1 0.191 0.213 0.232 RN1407 Resistor ratio R1/R2 RN1408 0.421 0.468 0.515 1.92 2.14 2.35 RN1409 2 2014-03-01