RN1414RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1414, RN1415, RN1416, RN1417, RN1418 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications z With built-in bias resistors z Simplified circuit design z Reduced number of parts and simplified manufacturing process z Complementary to RN2414 to RN2418 Equivalent Circuit and Bias Resistor Values Type No. R1 (k ) R2 (k ) RN1414 1 10 RN1415 2.2 10 RN1416 4.7 10 RN1417 10 4.7 RN1418 47 10 JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012g (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1414 to 1418 Collector-emitter voltage V 50 V CEO RN1414 5 RN1415 6 Emitter-base voltage V V RN1416 7 EBO RN1417 15 RN1418 25 Collector current I 100 mA C Collector power dissipation P 200 mW C RN1414 to 1418 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1994-08 1 2014-03-01 RN1414RN1418 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit RN1414 to 1418 I V = 50V, I = 0 100 nA CBO CB E Collector cut-off current RN1414 to 1418 I V = 50V, I = 0 500 nA CEO CE B RN1414 V = 5V, I = 0 0.35 0.65 EB C RN1415 V = 6V, I = 0 0.37 0.71 EB C Emitter cut-off current I mA RN1416 V = 7V, I = 0 0.36 0.68 EBO EB C RN1417 V = 15V, I = 0 0.78 1.46 EB C RN1418 V = 25V, I = 0 0.33 0.63 EB C RN1414 to 16,18 50 DC current gain h V = 5V, I = 10mA FE CE C RN1417 30 Collector-emitter RN1414 to 1418 V I = 5mA, I = 0.25mA 0.1 0.3 V CE (sat) C B saturation voltage RN1414 0.6 2.0 RN1415 0.7 2.5 Input voltage (ON) RN1416 V V = 0.2V, I = 5mA 0.8 2.5 V I (ON) CE C RN1417 1.5 3.5 RN1418 2.5 10.0 RN1414 0.3 0.9 0.3 1.0 RN1415 Input voltage (OFF) V V = 5V, I = 0.1mA RN1416 0.3 1.1 V I (OFF) CE C 0.3 2.3 RN1417 RN1418 0.5 5.7 Transition frequency RN1414 to 1418 f V = 10V, I = 5mA 250 MHz T CE C V = 10V, I = 0, Collector Output CB E RN1414 to 1418 C 3.0 6.0 pF ob capacitance f = 1MHz RN1414 0.7 1.0 1.3 RN1415 1.54 2.2 2.86 Input resistor RN1416 R1 3.29 4.7 6.11 k RN1417 7.0 10.0 13.0 RN1418 32.9 47.0 61.1 RN1414 0.1 0.22 RN1415 Resistor ratio RN1416 R1/R2 0.47 2.13 RN1417 RN1418 4.7 2 2014-03-01