RN1421RN1427 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1421, RN1422, RN1423, RN1424 RN1425, RN1426, RN1427 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications z High current type (I (max) = 800mA) C z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Low V (sat) CE z Complementary to RN2421 to RN2427 Equivalent Circuit and Bias Resister Values Type No. R1 (k ) R2 (k ) RN1421 1 1 RN1422 2.2 2.2 RN1423 4.7 4.7 S-Mini RN1424 10 10 JEDEC TO-236MOD RN1425 0.47 10 JEITA SC-59 RN1426 1 10 TOSHIBA 2-3F1A RN1427 2.2 10 Weight: 12 mg (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1421 to 1427 Collector-emitter voltage V 50 V CEO RN1421 to 1424 10 Emitter-base voltage V V RN1425, 1426 5 EBO RN1427 6 Collector current I 800 mA C Collector power dissipation P 200 mW C RN1421 to 1427 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1988-03 1 2014-03-01 RN1421RN1427 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit I V = 50V, I = 0 100 CBO CB E Collector cut-off RN1421 to 1427 nA current I V = 50V, I = 0 500 CEO CE B RN1421 3.85 7.14 RN1422 1.75 3.25 V = 10V, I = 0 EB C RN1423 0.82 1.52 Emitter cut-off current RN1424 I 0.38 0.71 mA EBO RN1425 0.365 0.682 V = 5V, I = 0 EB C RN1426 0.35 0.65 RN1427 V = 6V, I = 0 0.378 0.703 EB C RN1421 60 RN1422 65 RN1423 70 DC current gain RN1424 90 h V = 1V, I = 100mA FE CE C RN1425 90 RN1426 90 RN1427 90 RN1421 I = 50mA, I = 2mA C B Collector-emitter V 0.25 V CE (sat) saturation voltage RN1422 to 1427 I = 50mA, I = 1mA C B RN1421 1.0 3.5 RN1422 1.4 4.5 RN1423 2.0 6.5 Input voltage (ON) V V = 0.2V, I = 100mA V RN1424 3.0 12.0 I (ON) CE C RN1425 0.6 2.0 RN1426 0.7 2.5 RN1427 1.0 3.0 RN1421 to 1424 0.8 1.3 Input voltage (OFF) V V = 5V, I = 0.1mA 0.4 0.8 V RN1425, 1426 I (OFF) CE C RN1427 0.5 1.0 Transition frequency RN1421 to 1427 f V = 5V, I = 20mA 300 MHz T CE C Collector Output RN1421 to 1427 C V = 10V, I = 0, f = 1MHz 7 pF ob CB E capacitance RN1421 0.7 1.0 1.3 RN1422 1.54 2.2 2.86 RN1423 3.29 4.7 6.11 Input resistor R1 k RN1424 7 10 13 RN1425 0.329 0.47 0.61 RN1426 0.7 1.0 1.3 RN1427 1.54 2.2 2.86 RN1421 to 1424 0.9 1.0 1.1 0.0423 0.047 0.0517 RN1425 Resistor ratio R1/R2 RN1426 0.09 0.1 0.11 RN1427 0.2 0.22 0.24 2 2014-03-01