RN1601 to RN1606 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1601, RN1602, RN1603 RN1604, RN1605, RN1606 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in SM6 (super-mini-type with six (6) leads) With built-in bias resistors Simplified circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN2601 to RN2606 Equivalent Circuit and Bias Resistor Values Part No. R1 (k ) R2 (k ) SM6 RN1601 4.7 4.7 JEDEC JEITA RN1602 10 10 TOSHIBA 2-3N1A RN1603 22 22 Weight: 15mg (typ.) RN1604 47 47 RN1605 2.2 47 RN1606 4.7 47 Start of commercial production 1988-11 1 2019 2019-11-13 Toshiba Electronic Devices & Storage Corporation RN1601 to RN1606 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1601 to 1606 Collector-emitter voltage V 50 V CEO RN1601 to 1604 10 Emitter-base voltage V V EBO RN1605, 1606 5 Collector current I 100 mA C Collector power dissipation P * 300 mW C RN1601 to 1606 Junction temperature T 150 C j Storage temperature range T 55 to150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating Internal Circuit (Top View) 2 2019 2019-11-13 Toshiba Electronic Devices & Storage Corporation