RN1607(TE85L,F) Toshiba

RN1607 to RN1609 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1607, RN1608, RN1609 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in SM6 (super-mini-type with six (6) leads) With built-in bias resistors. Simplified circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN2607 to RN2609 Equivalent Circuit and Bias Resistor Values SM6 Part No.. R1 (k ) R2 (k ) JEDEC RN1607 10 47 JEITA RN1608 22 47 TOSHIBA 2-3N1A RN1609 47 22 Weight: 0.015 g (typ.) Equivalent Circuit (Top View) Start of commercial production 1988-11 1 2019 2019-11-13 Toshiba Electronic Devices & Storage Corporation RN1607 to RN1609 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO RN1607 6 Emitter-base voltage RN1608 V 7 V EBO RN1609 15 Collector current I 100 mA C Collector power dissipation P 300 mW C* Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating 2 2019 2019-11-13 Toshiba Electronic Devices & Storage Corporation