RN1701 to RN1706 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1701, RN1702, RN1703 RN1704, RN1705, RN1706 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN2701 to RN2706 Equivalent Circuit and Bias Resistor Values USV JEDEC JEITA TOSHIBA 2-2L1A Weight: 6.2mg (typ.) Part No. R1 (k ) R2 (k ) RN1701 4.7 4.7 RN1702 10 10 RN1703 22 22 RN1704 47 47 RN1705 2.2 47 RN1706 4.7 47 Start of commercial production 1992-01 1 2019 2019-10-17 Toshiba Electronic Devices & Storage Corporation RN1701 to RN1706 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1701 to 1706 Collector-emitter voltage V 50 V CEO RN1701 to 1704 10 Emitter-base voltage V V EBO RN1705, 1706 5 Collector current I 100 mA C Collector power dissipation P * 200 mW C RN1701 to 1706 Junction temperature T 150 C j Storage temperature range T 55 to150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating Equivalent Circuit (Top View) 2 2019 2019-10-17 Toshiba Electronic Devices & Storage Corporation