RN1706JE(TE85L,F) Toshiba

RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1701JE, RN1702JE, RN1703JE RN1704JE, RN1705JE, RN1706JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. A wide range of resistor values is available for use in various circuit designs. Complementary to RN2701JE to RN2706JE Equivalent Circuit and Bias Resistor Values 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) C 4.COLLECTOR2 (C2) Type No. R1 (k ) R2 (k ) 5.COLLECTOR1 (C1) RN1701JE 4.7 4.7 R1 B RN1702JE 10 10 JEDEC RN1703JE 22 22 JEITA RN1704JE 47 47 TOSHIBA 2-2P1D E RN1705JE 2.2 47 Weight: 0.003 g (typ.) RN1706JE 4.7 47 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Equivalent Circuit (top view) Characteristics Symbol Rating Unit 5 4 Collector-base voltage V 50 V CBO RN1701JE to 1706JE Collector-emitter voltage V 50 V CEO Q1 Q2 RN1701JE 10 to 1704JE Emitter-base voltage V V EBO RN1705JE 5 RN1706JE 1 2 3 Collector current I 100 mA C Collector power dissipation P (Note 1) 100 mW C RN1701JE to 1706JE Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Start of commercial production 2000-06 1 2014-03-01 R2 RN1701JE~RN1706JE Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. MaxUnit I V = 50 V, I = 0 100 CBO CB E Collector cut-off current RN1701JE to RN1706JE nA I V = 50 V, I = 0 500 CEO CE B RN1701JE 0.82 1.52 RN1702JE 0.38 0.71 V = 10 V, I = 0 EB C RN1703JE 0.17 0.33 Emitter cut-off current I mA EBO RN1704JE 0.082 0.15 RN1705JE 0.078 0.145 V = 5 V, I = 0 EB C RN1706JE 0.074 0.138 RN1701JE 30 RN1702JE 50 RN1703JE 70 DC current gain h V = 5 V, I = 10 mA FE CE C RN1704JE 80 RN1705JE 80 RN1706JE 80 Collector-emitter I = 5 mA, C RN1701JE to RN1706JE V 0.1 0.3 V CE (sat) saturation voltage I = 0.25 mA B RN1701JE 1.1 2.0 RN1702JE 1.2 2.4 RN1703JE 1.3 3.0 Input voltage (ON) V V = 0.2 V, I = 5 mA V I (ON) CE C RN1704JE 1.5 5.0 RN1705JE 0.6 1.1 RN1706JE 0.7 1.3 RN1701JE to RN1704JE 1.0 1.5 Input voltage (OFF) V V = 5 V, I = 0.1 mA V I (OFF) CE C RN1705JE, RN1706JE 0.5 0.8 Transition frequency RN1701JE to RN1706JE f V = 10 V, I = 5 mA 250 MHz T CE C Collector output V = 10 V, I = 0, CB E RN1701JE to RN1706JE C 3 6 pF ob capacitance f = 1 MHz RN1701JE 3.29 4.7 6.11 RN1702JE 7 10 13 RN1703JE 15.4 22 28.6 Input resistor R1 k RN1704JE 32.9 47 61.1 RN1705JE 1.54 2.2 2.86 RN1706JE 3.29 4.7 6.11 RN1701JE to RN1704JE 0.9 1.0 1.1 Resistor ratio RN1705JE R1/R2 0.0421 0.0468 0.0515 RN1706JE 0.09 0.1 0.11 2 2014-03-01