RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1710JE, RN1711JE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Wide range of resistor values are available to use in various circuit designs. Complementary to RN2710JE to RN2711JE Equivalent Circuit 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) C 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) R1 B JEDEC JEITA E TOSHIBA Weight: 0.003 g (typ.) Absolute Maximum Ratings (Ta = 25C) Equivalent Circuit (Q1, Q2 common) (top view) 5 4 Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Q1 Q2 Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C 1 2 3 Collector power dissipation P (Note 1) 100 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Start of commercial production 2000-06 1 2014-03-01 RN1710JE,RN1711JE Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 50 V, I = 0 100 nA CBO CB E Emitter cut-off current I V = 5 V, I = 0 100 nA EBO EB C DC current gain h V = 5 V, I = 1 mA 120 700 FE CE C Collector-emitter saturation voltage V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B Transition frequency f V = 10 V, I = 5 mA 250 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 3 6 pF ob CB E RN1710JE 3.29 4.7 6.11 Input resistor R1 k RN1711JE 7 10 13 2 2014-03-01