X-On Electronics has gained recognition as a prominent supplier of RN1711,LF Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. RN1711,LF Bipolar Transistors - Pre-Biased are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

RN1711,LF Toshiba

RN1711,LF electronic component of Toshiba
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Part No.RN1711,LF
Manufacturer: Toshiba
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased NPN x 2 BRT Q1BSR=10kOhm Q1BER=Inf.kOhm Q2BSR=10kOhm Q2BER=Inf.kOhm VCEO=50V IC=0.1A
Datasheet: RN1711,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1715 ea
Line Total: USD 0.17 
Availability - 7565
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7565
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1715
10 : USD 0.1129
100 : USD 0.0511
1000 : USD 0.0458
3000 : USD 0.0362
9000 : USD 0.032
24000 : USD 0.0309
45000 : USD 0.0298
99000 : USD 0.0287

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Emitter- Base Voltage Vebo
Brand
Maximum Dc Collector Current
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RN1711,LF from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RN1711,LF and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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RN1710,RN1711 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1710, RN1711 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in USV (ultra super mini type with 5 leads) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN2710 and RN2711 Equivalent Circuit Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) USV Characterisstic Symbol Rating Unit JEDEC Collector-base voltage V 50 V CBO JEITA Collector-emitter voltage V 50 V TOSHIBA 22L1A CEO Weight: 6.2 mg (typ.) Emitter-base voltage V EBO 5 V Collector current I 100 mA C Collector power dissipation P * 200 mW C Equivalent Circuit (Top View) Junction temperature T 150 C j Storage temperature range T 55 to150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating Start of commercial production 1998-02 1 2014-03-01 RN1710,RN1711 Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current I V = 50V, I = 0 100 nA CBO CB E Emitter cut-off current I V = 5V, I = 0 100 nA EBO EB C DC current gain h V = 5V, I = 1mA 120 700 FE CE C Collector-emitter saturation voltage V I = 5mA, I = 0.25mA 0.1 0.3 V CE (sat) C B Transition frequency f V = 10V, I = 5mA 250 MHz T CE C Collector output capacitance C V = 10V, I = 0, f = 1MHz 3 6 pF ob CB E RN1710 3.29 4.7 6.11 Input resistor R1 k RN1711 7 10 13 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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