RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1901FE, RN1902FE, RN1903FE RN1904FE, RN1905FE, RN1906FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Complementary to RN2901FE to RN2906FE Equivalent Circuit and Bias Resistor Values C Type No. R1 (k ) R2 (k ) RN1901FE 4.7 4.7 R1 B RN1902FE 10 10 RN1903FE 22 22 RN1904FE 47 47 JEDEC E RN1905FE 2.2 47 JEITA RN1906FE 4.7 47 TOSHIBA 2-2N1G Weight: 3 mg (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Equivalent Circuit (top view) Characteristics Symbol Rating Unit 6 5 4 Collector-base voltage V 50 V CBO RN1901FE to RN1906FE Collector-emitter voltage V 50 V CEO RN1901FE to 10 Q2 Q1 RN1904FE Emitter-base voltage V V EBO RN1905FE 5 RN1906FE 1 2 3 Collector current I 100 mA C Collector power dissipation P(Note1) 100 mW C RN1901FE to RN1906FE Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Total rating Start of commercial production 2000-05 1 2014-03-01 R2 RN1901FE~RN1906FE Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. MaxUnit I V = 50 V, I = 0 100 CBO CB E Collector cut-off current RN1901FE to RN1906FE nA I V = 50 V, I = 0 500 CEO CE B RN1901FE 0.82 1.52 RN1902FE 0.38 0.71 V = 10 V, I = 0 EB C RN1903FE 0.17 0.33 Emitter cut-off current I mA EBO RN1904FE 0.082 0.15 RN1905FE 0.078 0.145 V = 5 V, I = 0 EB C RN1906FE 0.074 0.138 RN1901FE 30 RN1902FE 50 RN1903FE 70 DC current gain h V = 5 V, I = 10 mA FE CE C RN1904FE 80 RN1905FE 80 RN1906FE 80 Collector-emitter I = 5 mA, C RN1901FE to RN1906FE V 0.1 0.3 V CE (sat) saturation voltage I = 0.25 mA B RN1901FE 1.1 2.0 RN1902FE 1.2 2.4 RN1903FE 1.3 3.0 Input voltage (ON) V V = 0.2 V, I = 5 mA V I (ON) CE C RN1904FE 1.5 5.0 RN1905FE 0.6 1.1 RN1906FE 0.7 1.3 RN1901FE to RN1904FE 1.0 1.5 Input voltage (OFF) V V = 5 V, I = 0.1 mA V I (OFF) CE C RN1905FE, RN1906FE 0.5 0.8 Transition frequency RN1901FE to RN1906FE f V = 10 V, I = 5 mA 250 MHz T CE C Collector output V = 10 V, I = 0, CB E RN1901FE to RN1906FE C 3 6 pF ob capacitance f = 1 MHz RN1901FE 3.29 4.7 6.11 RN1902FE 7 10 13 RN1903FE 15.4 22 28.6 Input resistor R1 k RN1904FE 32.9 47 61.1 RN1905FE 1.54 2.2 2.86 RN1906FE 3.29 4.7 6.11 RN1901FE to RN1904FE 0.9 1.0 1.1 Resistor ratio RN1905FE R1/R2 0.0421 0.0468 0.0515 RN1906FE 0.09 0.1 0.11 2 2014-03-01