RN1903,LF(CT Toshiba

RN1901 to RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1901, RN1902, RN1903 RN1904, RN1905, RN1906 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit AEC-Q101 Qualified (Note1) Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN2901 to RN2906 Note1: For detail information, please contact to our sales. Equivalent Circuit and Bias Resistor Values Part No. R1 (k ) R2 (k ) RN1901 4.7 4.7 US6 JEDEC RN1902 10 10 JEITA RN1903 22 22 TOSHIBA 2-2J1A RN1904 47 47 Weight: 6.8 mg(typ.) RN1905 2.2 47 RN1906 4.7 47 Equivalent Circuit (Top View) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1901 to 1906 Collector-emitter voltage V 50 V CEO RN1901 to 1904 10 Emitter-base voltage V V EBO RN1905, 1906 5 Collector current I 100 mA C Collector power dissipation P * 200 mW C RN1901 to 1906 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating Start of commercial production 1990-12 2019 2019-11-15 1 Toshiba Electronic Devices & Storage Corporation RN1901 to RN1906 Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 A 100 CBO CB E Collector cut-off current RN1901 to 1906 nA ICEO VCE = 50 V, IB = 0 A 500 RN1901 0.82 1.52 RN1902 0.38 0.71 V = 10 V, I = 0 A EB C RN1903 0.17 0.33 Emitter cut-off current IEBO mA RN1904 0.082 0.15 RN1905 0.078 0.145 VEB = 5 V, IC = 0 A RN1906 0.074 0.138 RN1901 30 RN1902 50 RN1903 70 DC current gain h V = 5 V, I = 10 mA FE CE C RN1904 80 RN1905 80 RN1906 80 Collector-emitter RN1901 to 1906 V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B saturation voltage RN1901 1.1 2.0 RN1902 1.2 2.4 RN1903 1.3 3.0 Input voltage (ON) V V = 0.2 V, I = 5 mA V I (ON) CE C RN1904 1.5 5.0 RN1905 0.6 1.1 RN1906 0.7 1.3 RN1901 to 1904 1.0 1.5 Input voltage (OFF) V V = 5 V, I = 0.1 mA V I (OFF) CE C RN1905, 1906 0.5 0.8 Transition frequency RN1901 to 1906 f V = 10 V, I = 5 mA 250 MHz T CE C Collector output V = 10 V, I = 0 A, CB E RN1901 to 1906 C 3 6 pF ob capacitance f = 1 MHz RN1901 3.29 4.7 6.11 RN1902 7 10 13 RN1903 15.4 22 28.6 Input resistor R1 k RN1904 32.9 47 61.1 RN1905 1.54 2.2 2.86 RN1906 3.29 4.7 6.11 RN1901 to 1904 0.9 1.0 1.1 Resistor ratio RN1905 R1/R2 0.0421 0.0468 0.0515 RN1906 0.09 0.1 0.11 2019 2019-11-15 2 Toshiba Electronic Devices & Storage Corporation