RN1905,LF(CT Toshiba

RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1.00.05 0.80.05 0.10.05 0.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1 6 Incorporating a bias resistor into a transistor reduces parts count. 2 5 Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. 4 3 Complementary to RN2901FS~RN2906FS Equivalent Circuit and Bias Resistor Values C 1.EMIITTER1 (E1) Type No. R1 (k ) R2 (k ) 2.BASE1 (B1) 3.COLLECTOR2 (C2) RN1901FS 4.7 4.7 4. EMIITTER2 (E2) R1 5.BASE2 (B2) B RN1902FS 10 10 fS6 6.COLLECTOR1 (C1) RN1903FS 22 22 JEDEC RN1904FS 47 47 E RN1905FS 2.2 47 JEITA RN1906FS 4.7 47 TOSHIBA 2-1F1D Weight: 0.001g (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Equivalent Circuit (top view) Characteristics Symbol Rating Unit 6 5 4 Collector-base voltage V 20 V CBO RN1901FS~ 1906FS Collector-emitter voltage V 20 V CEO Q2 Q1 RN1901FS~ 10 1904FS Emitter-base voltage V V EBO RN1905FS, 5 1906FS 1 2 3 Collector current I 50 mA C Collector power dissipation P (Note 1) 50 mW C RN1901FS~ RN1906FS Junction temperature T 150 C j Storage temperature range T 55~150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating 1 2007-11-01 R2 1.00.05 +0.02 0.70.05 0.48 -0.04 0.35 0.35 0.10.05 0.150.05RN1901FS~RN1906FS Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. Max Unit I V = 20 V, I = 0 100 CBO CB E Collector cut-off current RN1901FS~1906FS nA I V = 20 V, I = 0 500 CEO CE B RN1901FS 0.89 1.33 RN1902FS 0.41 0.63 V = 10 V, I = 0 EB C RN1903FS 0.18 0.29 Emitter cut-off current I mA EBO RN1904FS 0.088 0.133 RN1905FS 0.085 0.127 V = 5 V, I = 0 EB C RN1906FS 0.08 0.121 RN1901FS 30 RN1902FS 60 RN1903FS 100 DC current gain h V = 5 V, I = 10 mA FE CE C RN1904FS 120 RN1905FS 120 RN1906FS 120 Collector-emitter I = 5 mA, C RN1901FS~1906FS V 0.15 V CE (sat) saturation voltage I = 0.25 mA B RN1901FS 1.0 2.0 RN1902FS 1.0 2.2 RN1903FS 1.1 2.7 Input voltage (ON) V V = 0.2 V, I = 5 mA V I (ON) CE C RN1904FS 1.2 3.6 RN1905FS 0.6 1.1 RN1906FS 0.6 1.2 RN1901FS~1904FS 0.8 1.5 Input voltage (OFF) V V = 5 V, I = 0.1 mA V I (OFF) CE C RN1905FS, 1906FS 0.4 0.8 Collector output V = 10 V, I = 0, CB E RN1901FS~1906FS C 1.2 pF ob capacitance f = 1 MHz RN1901FS 3.76 4.7 5.64 RN1902FS 8 10 12 RN1903FS 17.6 22 26.4 Input resistor R1 k RN1904FS 37.6 47 56.4 RN1905FS 1.76 2.2 2.64 RN1906FS 3.76 4.7 5.64 RN1901FS~1904FS 0.8 1.0 1.2 Resistor ratio R1/R2 RN1905FS 0.0376 0.0468 0.0562 RN1906FS 0.08 0.1 0.12 2 2007-11-01