RN1907FE,LF(CT Toshiba

RN1907FE~RN1909FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1907FE, RN1908FE, RN1909FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Complementary to RN2907FE to RN2909FE Equivalent Circuit and Bias Resistor Values C Type No. R1 (k) R2 (k) RN1907FE 10 47 R1 B RN1908FE 22 47 RN1909FE 47 22 JEDEC E JEITA TOSHIBA 2-2N1G Weight: 0.003 g (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 common) Equivalent Circuit Characteristics Symbol Rating Unit (top view) Collector-base voltage V 50 V CBO RN1907FE 6 5 4 to 1909FE Collector-emitter voltage V 50 V CEO RN1907FE 6 Q2 Q1 Emitter-base voltage V V RN1908FE 7 EBO RN1909FE 15 Collector current I 100 mA C 1 2 3 Collector power dissipation P (Note 1) 100 mW C RN1907FE to 1909FE Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Start of commercial production 2000-05 1 2014-03-01 R2 RN1907FE~RN1909FE Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. MaxUnit I V = 50 V, I = 0 100 CBO CB E Collector cut-off current RN1907FE to RN1909FE nA I V = 50 V, I = 0 500 CEO CE B RN1907FE V = 6 V, I = 0 0.081 0.15 EB C Emitter cut-off current I mA RN1908FE V = 7 V, I = 0 0.078 0.145 EBO EB C RN1909FE V = 15 V, I = 0 0.167 0.311 EB C RN1907FE 80 DC current gain RN1908FE 80 h V = 5 V, I = 10 mA FE CE C RN1909FE 70 Collector-emitter I = 5 mA, C RN1907FE to RN1909FE V 0.1 0.3 V CE (sat) saturation voltage I = 0.25 mA B RN1907FE 0.7 1.8 Input voltage (ON) RN1908FE 1.0 V V = 0.2 V, I = 5 mA 2.6 V I (ON) CE C RN1909FE 2.2 5.8 RN1907FE 0.5 1 Input voltage (OFF) RN1908FE 0.6 V V = 5 V, I = 0.1 mA 1.16 V I (OFF) CE C RN1909FE 1.5 2.6 Transition frequency RN1907FE to RN1909FE f V = 10 V, I = 5 mA 250 MHz T CE C Collector output V = 10 V, I = 0, CB E RN1907FE to RN1909FE C 3 6 pF ob capacitance f = 1 MHz RN1907FE 7 10 13 Input resistor RN1908FE 15.4 R1 22 28.6 k RN1909FE 32.9 47 61.1 RN1907FE 0.191 0.213 0.232 Resistor ratio RN1908FE R1/R2 0.421 0.468 0.515 RN1909FE 1.92 2.14 2.35 2 2014-03-01