RN1907 to RN1909 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1907, RN1908, RN1909 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit AEC-Q101 Qualified (Note1) Including two devices in US6 (ultra super mini type with 6 leads). With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN2907 to RN2909 Note1: For detail information, please contact to our sales. Equivalent Circuit and Bias Resistor Values Type No. R1 (k ) R2 (k ) RN1907 10 47 US6 JEDEC RN1908 22 47 JEITA RN1909 47 22 TOSHIBA 2-2J1A Weight: 6.8mg(typ.) Equivalent Circuit (Top View) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN1907 to 1909 Collector-emitter voltage V 50 V CEO RN1907 6 Emitter-base voltage RN1908 V 7 V EBO RN1909 15 Collector current I 100 mA C Collector power dissipation P * 200 mW RN1907 to C 1909 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating Start of commercial production 1990-12 2019 2019-11-15 1 Toshiba Electronic Devices & Storage Corporation RN1907 to RN1909 Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 mA 100 nA CBO CB E Collector cut-off current RN1907 to 1909 I V = 50 V, I = 0 mA 500 nA CEO CE B RN1907 V = 6 V, I = 0 mA 0.081 0.15 EB C Emitter cut-off current RN1908 I V = 7 V, I = 0 mA 0.078 0.145 mA EBO EB C RN1909 V = 15 V, I = 0 mA 0.167 0.311 EB C RN1907 80 DC current gain RN1908 h V = 5 V, I = 10 mA 80 FE CE C RN1909 70 Collector-emitter RN1907 to 1909 V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B saturation voltage RN1907 0.7 1.8 Input voltage (ON) RN1908 V V = 0. 2 V, I = 5 mA 1.0 2.6 V I (ON) CE C RN1909 2.2 5.8 RN1907 0.5 1.0 Input voltage (OFF) RN1908 V V = 5 V, I = 0.1 mA 0.6 1.16 V I (OFF) CE C RN1909 1.5 2.6 Transition frequency RN1907 to 1909 f V = 10 V, I = 5 mA 250 MHz T CE C V = 10 V, I = 0 mA, CB E Collector output capacitance RN1907 to 1909 C 3 6 pF ob f = 1MHz RN1907 7 10 13 Input resistor RN1908 R1 15.4 22 28.6 k RN1909 32.9 47 61.1 RN1907 0.191 0.213 0.232 Resistor ratio RN1908 R1/R2 0.421 0.468 0.515 RN1909 1.92 2.14 2.35 2019 2019-11-15 2 Toshiba Electronic Devices & Storage Corporation