RN1910FE,LF(CT Toshiba

RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1910FE, RN1911FE Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. Complementary to RN2910FE, RN2911FE Equivalent Circuit C R1 B JEDEC E JEITA TOSHIBA 2-2N1G Weight: 0.003 g (typ.) Absolute Maximum Ratings (Ta = 25C) Equivalent Circuit (Q1, Q2 common) (top view) 6 5 4 Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Q2 Q1 Emitter-base voltage V 5 V EBO Collector current I 100 mA C 1 2 3 Collector power dissipation P (Note 1) 100 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Start of commercial production 2000-05 1 2014-03-01 RN1910FE,RN1911FE Electrical Characteristics (Ta = 25C) (Q1, Q2 common) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 50 V, I = 0 100 nA CBO CB E Emitter cut-off current I V = 5 V, I = 0 100 nA EBO EB C DC current gain h V = 5 V, I = 1 mA 120 700 FE CE C Collector-emitter saturation voltage V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B Transition frequency f V = 10 V, I = 5 mA 250 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 3 6 pF ob CB E RN1910FE 3.29 4.7 6.11 Input resistor R1 k RN1911FE 7 10 13 2 2014-03-01