RN2101MFV to RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2101MFV, RN2102MFV, RN2103MFV RN2104MFV, RN2105MFV, RN2106MFV Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1. 2 0.05 0.80 0.05 Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, 1 so enabling the manufacture of ever more compact equipment and lowering 1 assembly cost. A wide range of resistor values is available for use in various circuits. 3 Complementary to the RN1101MFV to RN1106MFV 2 Equivalent Circuit and Bias Resistor Values Type No. R1 (k) R2 (k) RN2101MFV 4.7 4.7 RN2102MFV 10 10 RN2103MFV 22 22 1. BASE RN2104MFV 47 47 2. EMITTER VESM 3. COLLECTOR RN2105MFV 2.2 47 RN2106MFV 4.7 47 JEDEC JEITA Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-1L1A Weight: 1.5 mg (typ.) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN2101MFV to 2106MFV Collector-emitter voltage V 50 V CEO RN2101MFV to 2104MFV 10 Emitter-base voltage V V EBO RN2105MFV, 2106MFV 5 Collector current I 100 mA C Collector power dissipation P (Note 1) 150 mW C RN2101MFV to 2106MFV Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm) Land Pattern Example Unit: mm 0.5 0.45 1.15 0.4 0.45 Start of commercial production 2005-02 0.4 0.4 1 2016-09-14 1.2 0.05 0.8 0.05 0.5 0.05 0.4 0.4 0.22 0.05 0.13 0.05 0.32 0.05RN2101MFV to RN2106MFV Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 A 100 CBO CB E Collector cutoff RN2101MFV to nA current RN2106MFV I V = 50 V, I = 0 A 500 CEO CE B RN2101MFV 0.82 1.52 RN2102MFV 0.38 0.71 V = 10 V, I = 0 A EB C RN2103MFV 0.17 0.33 Emitter cutoff current I mA EBO RN2104MFV 0.082 0.15 RN2105MFV 0.078 0.145 V = 5 V, I = 0 A EB C RN2106MFV 0.074 0.138 RN2101MFV 30 RN2102MFV 50 RN2103MFV 70 V = 5 V, CE DC current gain h FE I = 10 mA C RN2104MFV 80 RN2105MFV 80 RN2106MFV 80 Collector-emitter RN2101MFV to I = 5 mA, C V 0.1 0.3 CE (sat) V saturation voltage RN2106MFV I = 0.5 mA B RN2101MFV 1.1 2.0 RN2102MFV 1.2 2.4 RN2103MFV 1.3 3.0 V = 0.2 V, CE Input voltage (ON) V V I (ON) I = 5 mA C RN2104MFV 1.5 5.0 RN2105MFV 0.6 1.1 RN2106MFV 0.7 1.3 RN2101MFV to 1.0 1.5 RN2104MFV = 5 V, VCE Input voltage (OFF) V V I (OFF) IC = 0.1 mA RN2105MFV, 0.5 0.8 RN2106MFV RN2101MFV to V = 10V, CE Transition frequency f 250 MHz T RN2106MFV I = 5mA C Collector output RN2101MFV to V = 10 V, I = 0 A, CB E C 0.9 ob pF capacitance RN2106MFV f = 1 MHz RN2101MFV 3.29 4.7 6.11 RN2102MFV 7 10 13 RN2103MFV 15.4 22 28.6 Input resistor R1 k RN2104MFV 32.9 47 61.1 RN2105MFV 1.54 2.2 2.86 RN2106MFV 3.29 4.7 6.11 RN2101MFV to 0.8 1.0 1.2 RN2104MFV Resistor ratio R1/R2 RN2105MFV 0.0376 0.0468 0.0562 RN2106MFV 0.08 0.1 0.12 2 2016-09-14