RN2101MFV to RN2106MFV Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2101MFV/02MFV/03MFV/04MFV/05MFV/06MFV 1. Applications Switching Inverter Circuits Interfacing Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (5) Complementary to RN1101MFV to RN1106MFV 3. Equivalent Circuit 4. Bias Resistor Values Part No. R1 (k) R2 (k) RN2101MFV 4.7 4.7 RN2102MFV 10 10 RN2103MFV 22 22 RN2104MFV 47 47 RN2105MFV 2.2 47 RN2106MFV 4.7 47 Start of commercial production 2005-02 2021 2021-08-18 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0RN2101MFV to RN2106MFV 5. Packaging and Pin Assignment 1: Base 2: Emitter 3: Collector VESM 6. Orderable part number Orderable part number AEC-Q101 Note Note RN2101MFV RN2101MFV,L3F General Use RN2101MFV,L3XGF YES (Note 1) Unintended Use (Note 1) RN2101MFV,L3XHF YES Automotive Use RN2102MFV RN2102MFV,L3F General Use RN2102MFV,L3XGF YES (Note 1) Unintended Use (Note 1) RN2102MFV,L3XHF YES Automotive Use RN2103MFV RN2103MFV,L3F General Use RN2103MFV,L3XGF YES (Note 1) Unintended Use (Note 1) RN2103MFV,L3XHF YES Automotive Use RN2104MFV RN2104MFV,L3F General Use RN2104MFV,L3XGF YES (Note 1) Unintended Use (Note 1) RN2104MFV,L3XHF YES Automotive Use RN2105MFV RN2105MFV,L3F General Use RN2105MFV,L3XGF YES (Note 1) Unintended Use (Note 1) RN2105MFV,L3XHF YES Automotive Use RN2106MFV RN2106MFV,L3F General Use RN2106MFV,L3XGF YES (Note 1) Unintended Use (Note 1) RN2106MFV,L3XHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. 2021 2021-08-18 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0