RN2106,LF(CT Toshiba

RN2101 to RN2106 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2101, RN2102, RN2103 RN2104, RN2105, RN2106 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit AEC-Q101 Qualified (Note1) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1101 to RN1106 Note1: For detail information, please contact our sales representative. Equivalent Circuit and Bias Resistor Values Part No. R1 (k ) R2 (k ) RN2101 4.7 4.7 RN2102 10 10 SSM RN2103 22 22 JEDEC RN2104 47 47 JEITA TOSHIBA 2-2H1A RN2105 2.2 47 Weight: 2.4 mg (typ.) RN2106 4.7 47 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN2101 to 2106 Collector-emitter voltage V 50 V CEO RN2101 to 2104 10 Emitter-base voltage V V EBO RN2105, 2106 5 Collector current I 100 mA C Collector power dissipation P 100 mW C RN2101 to 2106 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1990-12 2019 2019-12-04 1 Toshiba Electronic Devices & Storage Corporation RN2101 to RN2106 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 mA 100 CBO CB E Collector cut-off RN2101 to 2106 nA current ICEO VCE = 50 V, IB = 0 mA 500 RN2101 0.82 1.52 RN2102 0.38 0.71 V = 10 V, I = 0 mA EB C RN2103 0.17 0.33 Emitter cut-off current IEBO mA RN2104 0.082 0.15 RN2105 0.078 0.145 VEB = 5 V, IC = 0 mA RN2106 0.074 0.138 RN2101 30 RN2102 50 RN2103 70 DC current gain h V = 5 V, I = 10 mA FE CE C RN2104 80 RN2105 80 RN2106 80 Collector-emitter RN2101 to 2106 V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B saturation voltage 1.1 2.0 RN2101 RN2102 1.2 2.4 1.3 3.0 RN2103 Input voltage (ON) V V = 0.2 V, I = 5 mA I (ON) CE C V RN2104 1.5 5.0 0.6 1.1 RN2105 RN2106 0.7 1.3 1.0 1.5 RN2101 to 2104 Input voltage (OFF) V V = 5 V, I = 0.1 mA V I (OFF) CE C RN2105, 2106 0.5 0.8 Transition frequency RN2101 to 2106 f V = 10 V, I = 5 mA 200 MHz T CE C Collector Output V = 10 V, I = 0 mA, CB E RN2101 to 2106 C 3 6 pF ob capacitance f = 1 MHz 3.29 4.7 6.11 RN2101 RN2102 7 10 13 15.4 22 28.6 RN2103 Input resistor R1 k RN2104 32.9 47 61.1 1.54 2.2 2.86 RN2105 RN2106 3.29 4.7 6.11 0.9 1.0 1.1 RN2101 to 2104 Resistor ratio RN2105 R1/R2 0.0421 0.0468 0.0515 0.09 0.1 0.11 RN2106 2019 2019-12-04 2 Toshiba Electronic Devices & Storage Corporation