RN2107ACT~RN2109ACT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2107ACT, RN2108ACT, RN2109ACT Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Top View 0.60.05 Extra small package (CST3) is applicable for extra high density 0.50.03 fabrication. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Complementary to RN1107ACT to RN1109ACT 0.050.03 0.350.02 0.150.03 Equivalent Circuit and Bias Resistor Values C Type No. R1 (k) R2 (k) 1.BASE 2.EMITTER CST3 RN2107ACT 10 47 3.COLLECOTR R1 B RN2108ACT 22 47 JEDEC RN2109ACT 47 22 JEITA TOSHIBA 2-1J1A E Weight: 0.75 mg (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO RN2107ACT to RN2109ACT Collector-emitter voltage V 50 V CEO RN2107ACT 6 Emitter-base voltage RN2108ACT V 7 V EBO RN2109ACT 15 Collector current I 80 mA C Collector power dissipation P 100* mW C RN2107ACT to RN2109ACT Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg * : Mounted on FR4 board (10 mm 10 mm 1 mm) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2004-08 1 2014-10-21 R2 1.00.05 0.250.03 0.250.03 0.650.02 +0.02 0.050.03 0.38 -0.03RN2107ACT~RN2109ACT Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 100 CBO CB E Collector cut-off current RN2107ACT to 2109ACT nA I V = 50 V, I = 0 500 CEO CE B RN2107ACT V = 6 V, I = 0 0.088 0.131 EB C Emitter cut-off current RN2108ACT I V = 7 V, I = 0 0.085 0.126 mA EBO EB C RN2109ACT V = 15 V, I = 0 0.182 0.271 EB C RN2107ACT 80 V = 5 V, CE RN2108ACT 80 DC current gain h FE I = 10 mA C RN2109ACT 70 Collector-emitter I = 5 mA, C RN2107ACT to 2109ACT V V 0.15 CE (sat) saturation voltage I = 0.25 mA B RN2107ACT 0.8 1.8 V = 0.2 V, CE Input voltage (ON) RN2108ACT V V 1.0 3.0 I (ON) I = 5 mA C RN2109ACT 2.0 6.4 RN2107ACT 0.6 0.9 V = 5 V, CE Input voltage (OFF) RN2108ACT V 0.7 1.2 V I (OFF) I = 0.1 mA C RN2109ACT 1.5 2.6 Collector output V = 10 V, I = 0, CB E RN2107ACT to 2109ACT C 0.9 pF ob capacitance f = 1 MHz RN2107ACT 8 10 12 Input resistor RN2108ACT R1 17.6 22 26.4 k RN2109ACT 37.6 47 56.4 RN2107ACT 0.17 0.213 0.255 Resistor ratio RN2108ACT R1/R2 0.374 0.468 0.562 RN2109ACT 1.71 2.14 2.56 2 2014-10-21