RN2107RN2109 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2107, RN2108, RN2109 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications z Built-in bias resistors z Simplified circuit design z Fewer parts and simplified manufacturing process z Complementary to RN1107 to RN1109 Equivalent Circuit and Bias Resistor Values Type No. R1 (k ) R2 (k ) RN2107 10 47 RN2108 22 47 RN2109 47 22 JEDEC JEITA TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN2107 to 2109 Collector-emitter voltage V 50 V CEO RN2107 6 Emitter-base voltage V V RN2108 7 EBO RN2109 15 Collector current I 100 mA C Collector power dissipation P 100 mW C* RN2107 to 2109 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating Start of commercial production 1990-12 1 2014-03-01 RN2107RN2109 Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit I V = 50 V, I = 0 100 nA CBO CB E Collector cut-off RN2107 to 2109 current I V = 50 V, I = 0 500 nA CEO CE B RN2107 V = 6 V, I = 0 0.081 0.15 EB C Emitter cut-off current RN2108 VI = 7 V, I = 0 0.078 0.145 mA EBO EB C RN2109 V = 15 V, I = 0 0.167 0.311 EB C RN2107 80 DC current gain RN2108 80 h V = 5 V, I = 10 mA FE CE C RN2109 70 Collector-emitter V I = 5 mA, I = 0.25 mA 0.1 0.3 RN2107 to 2109 V CE (sat) C B saturation voltage RN2107 0.7 1.8 Input voltage (ON) RN2108 V V = 0.2 V, I = 5 mA 1.0 2.6 V I (ON) CE C RN2109 2.2 5.8 0.5 1.0 RN2107 Input voltage (OFF) V V = 5 V, I = 0.1 mA RN2108 0.6 1.16 V I (OFF) CE C 1.5 2.6 RN2109 Transition frequency RN2107 to 2109 f V = 10 V, I = 5 mA 200 MHz T CE C Collector Output V = 10 V, I = 0, CB E C 3 6 RN2107 to 2109 pF ob capacitance f = 1 MH z RN2107 7 10 13 Input resistor RN2108 R1 15.4 22 28.6 k RN2109 32.9 47 61.1 0.191 0.213 0.232 RN2107 Resistor ratio R1/R2 RN2108 0.421 0.468 0.515 1.92 2.14 2.35 RN2109 2 2014-03-01