RN2112,RN2113 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2112, RN2113 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications z Built-in bias resistors z Simplified circuit design z Fewer parts and simplified manufacturing process z Complementary to RN1112, RN1113 Equivalent Circuit Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO JEDEC Emitter-base voltage V 5 V EBO JEITA Collector current I 100 mA C TOSHIBA 2-2H1A Collector power dissipation P 100 mW C Weight: 2.4 mg (typ.) Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current I V = 50 V, I = 0 100 nA CBO CB E Emitter cut-off current I V = 5 V, I = 0 100 nA EBO EB C DC current gain h V = 5 V, I = 1 mA 120 400 FE CE C Collector-emitter saturation voltage V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B Transition frequency f V = 10 V, I = 5 mA 200 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 3 6 pF ob CB E RN2112 15.4 22 28.6 Input resistor R1 k RN2113 32.9 47 61.1 Start of commercial production 1990-12 1 2014-03-01 RN2112,RN2113 RN2112 RN2112 RN2113 RN2113 2 2014-03-01