RN2112MFV, RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2112MFV, RN2113MFV Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN1112MFV, RN1113MFV Equivalent Circuit 1.BASE 2.EMITTER VESM 3.COLLECTOR JEDEC Absolute Maximum Ratings (Ta = 25C) JEITA TOSHIBA 1-1Q1S Characteristic Symbol Rating Unit Weight: 1.5 mg (typ.) Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C Collector power dissipation P (Note 1) 150 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm) Land Pattern Dimensions (for reference only) Unit mm 0.5 0.45 1.15 0.4 0.45 Start of commercial production 2005-02 0.4 0.4 2016-2019 2019-01-07 1 Toshiba Electronic Devices & Storage Corporation RN2112MFV, RN2113MFV Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current I V = 50 V, I = 0 A 100 nA CBO CB E Emitter cutoff current I V = 5 V, I = 0 A 100 nA EBO EB C DC current gain hFE VCE = 5 V, IC = 1 mA 120 400 Collector-emitter saturation voltage V I = 5 mA, I = 0.5 mA 0.1 0.3 V CE (sat) C B Collector output capacitance C V = 10 V, I = 0 A, f = 1 MHz 0.9 pF ob CB E RN2112MFV 15.4 22 28.6 Input resistor R1 k RN2113MFV 32.9 47 61.1 2016-2019 2019-01-07 2 Toshiba Electronic Devices & Storage Corporation