RN2114MFVRN2118MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2114MFV,RN2115MFV,RN2116MFV RN2117MFV,RN2118MFV Unit: mm Switching Applications Inverter Circuit Applications 1.20.05 0.80.05 Interface Circuit Applications Driver Circuit Applications 1 z Ultra-small package, suited to very high density mounting 2 3 z Incorporating a bias resistor into t he transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. z A wide range of resistor values is available for use in various circuits. z Complementary to RN1114MFV to RN1118MFV Equivalent Circuit and Bias Resistor Values 1.BASE VESM 2.EMITTER 3.COLLECTOR Type No. R1 (k )R2 (k ) RN2114MFV 1 10 RN2115MFV 2.2 10 JEDEC JEITA RN2116MFV 4.7 10 TOSHIBA 2-1L1A RN2117MFV 10 4.7 Weight: 1.5 mg (typ.) RN2118MFV 47 10 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage RN2114MFV V 50 V CBO to Collector-emitter voltage V 50 V CEO RN2118MFV RN2114MFV 5 RN2115MFV 6 Emitter-base voltage V V RN2116MFV 7 EBO RN2117MFV 15 RN2118MFV 25 Collector current I 100 mA C RN2114MFV Collector power dissipation P(Note1) 150 mW C to Junction temperature RN2118MFV T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Mounted on FR4 board (25.4 mm 25.4 mm 1.6mmt ) 1 2009-04-17 1.20.05 0.80.05 0.50.05 0.4 0.4 0.22 0.05 0.13 0.05 0.32 0.05 RN2114MFVRN2118MFV Land Pattern Example unit: mm 0.5 0.45 1.15 0.4 0.45 0.4 0.4 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit I V = 50V, I = 0 100 CBO CB E Collector cut-off RN2114MFV to 2118MFV nA current I V = 50V, I = 0 500 CEO CE B RN2114MFV V = 5V, I = 0 0.35 0.65 EB C RN2115MFV V = 6V, I = 0 0.37 0.71 EB C Emitter cut-off current I mA RN2116MFV V = 7V, I = 0 0.36 0.68 EBO EB C RN2117MFV V = 15V, I = 0 0.78 1.46 EB C RN2118MFV V = 25V, I = 0 0.33 0.63 EB C RN2114MFV to 16MFV, 50 18MFV DC current gain h V = 5V, I = 10mA FE CE C RN2117MFV 30 Collector-emitter RN2114MFV to 2118MFV V I = 5mA, I = 0.5mA 0.1 0.3 V CE(sat) C B saturation voltage RN2114MFV 0.5 2.0 RN2115MFV 0.6 2.5 Input voltage (ON) RN2116MFV V V = 0.2V, I = 5mA 0.7 2.5 V I (ON) CE C RN2117MFV 1.5 3.5 RN2118MFV 2.5 10.0 RN2114MFV 0.3 0.9 0.3 1.0 RN2115MFV Input voltage (OFF) RN2116MFV V V = 5V, I = 0.1mA 0.3 1.1 V I (OFF) CE C RN2117MFV 0.3 3.0 0.5 5.7 RN2118MFV Collector output V = 10V, I = 0, CB E RN2114MFV to 2118MFV C 0.9 pF ob capacitance f = 1MHz RN2114MFV 0.7 1.0 1.3 1.54 2.2 2.86 RN2115MFV Input resistor RN2116MFV R1 3.29 4.7 6.11 k 7 10 13 RN2117MFV RN2118MFV 32.9 47 61.1 RN2114MFV 0.1 RN2115MFV 0.22 Resistor ratio R1/R2 RN2116MFV 0.47 RN2117MFV 2.13 RN2118MFV 4.7 2 2009-04-17