RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2130MFV Unit: mm Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN1130MFV Equivalent Circuit 1.BASE 2.EMITTER VESM 3.COLLECTOR JEDEC JEITA TOSHIBA 1-1Q1S Weight: 1.5 mg (typ.) Absolute Maximum Ratings (Ta = 25C) Characterisstic Symbol Rating Unit Collector-base voltage V 50 V CBO V Collector-emitter voltage V 50 CEO Emitter-base voltage V V EBO 10 Collector current I 100 mA C Collector power dissipation P (Note1) 150 mW C C Junction temperature T 150 j Storage temperature range T C stg 55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1 : Mounted on FR4 board (25.4 mm 25.4 mm 1.6 mm) Land Pattern Dimensions (for reference only) 0.5 unit: mm 0.45 1.15 0.4 Start of commercial production 0.45 2005-04 0.4 0.4 2019 2019-01-10 1 Toshiba Electronic Devices & Storage Corporation RN2130MFV Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 A 100 nA CBO CB E Collector cut-off current I V = 50 V, I = 0 A 500 nA CEO CE B Emitter cut-off current I V = 10 V, I = 0 A 38 72 A EBO EB C DC current gain h V = 5 V, I = 10 mA 100 FE CE C Collector-emitter saturation voltage V I = 5 mA, I = 0.5 mA 0.1 0.3 V CE (sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 1.7 8.2 V I(ON) CE C Input voltage (OFF) V V = 5 V, I = 0.1 mA 1.0 1.6 V I(OFF) CE C Collector output capacitance C V = 10 V, I = 0 A, f = 1 MH 0.9 pF ob CB E z Input resistor R1 70 100 130 k Resistor ratio R1/R2 0.8 1.0 1.2 2019 2019-01-10 2 Toshiba Electronic Devices & Storage Corporation