RN2301 to RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2301, RN2302, RN2303 RN2304, RN2305, RN2306 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit AEC-Q101 Qualified (Note1) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1301 to RN1306 Note1: For detail information, please contact our sales representative. Equivalent Circuit Bias Resistor Values Part No. R1 (k ) R2 (k ) USM RN2301 4.7 4.7 RN2302 10 10 JEDEC JEITA SC-70 RN2303 22 22 TOSHIBA 2-2E1A RN2304 47 47 Weight: 0.006g (typ.) RN2305 2.2 47 RN2306 4.7 47 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN2301 to RN2306 Collector-emitter voltage V 50 V CEO RN2301 to RN2304 10 Emitter-base voltage V V EBO RN2305, RN2306 5 Collector current I 100 mA C Collector power dissipation P 100 mW C RN2301 to RN2306 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1987-09 2019 2019-12-04 1 Toshiba Electronic Devices & Storage Corporation RN2301 to RN2306 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 mA 100 CBO CB E Collector cut-off current RN2301 to RN2306 nA ICEO VCE = 50 V, IB = 0 mA 500 RN2301 0.82 1.52 RN2302 0.38 0.71 V = 10 V, I = 0 mA EB C RN2303 0.17 0.33 Emitter cut-off current IEBO mA RN2304 0.082 0.15 RN2305 0.078 0.145 VEB = 5 V, IC = 0 mA RN2306 0.074 0.138 RN2301 30 RN2302 50 RN2303 70 DC current gain h V = 5 V, I = 10 mA FE CE C RN2304 80 RN2305 80 RN2306 80 Collector-emitter RN2301 to RN2306 V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B saturation voltage RN2301 1.1 2.0 RN2302 1.2 2.4 RN2303 1.3 3.0 Input voltage (ON) V V = 0.2 V, I = 5 mA V I (ON) CE C RN2304 1.5 5.0 RN2305 0.6 1.1 RN2306 0.7 1.3 RN2301 to RN2304 1.0 1.5 Input voltage (OFF) V V = 5 V, I = 0.1 mA V I (OFF) CE C RN2305, RN2306 0.5 0.8 Transition frequency RN2301 to RN2306 f V = 10 V, I = 5 mA 200 MHz T CE C Collector output V = 10 V, I = 0 mA CB E RN2301 to RN2306 Cob 3 6 pF capacitance f = 1 MHz RN2301 3.29 4.7 6.11 RN2302 7 10 13 RN2303 15.4 22 28.6 Input resistor R1 k RN2304 32.9 47 61.1 RN2305 1.54 2.2 2.86 RN2306 3.29 4.7 6.11 RN2301 to RN2304 0.9 1.0 1.1 Resistor ratio RN2305 R1/R2 0.0421 0.0468 0.0515 RN2306 0.09 0.1 0.11 2019 2019-12-04 2 Toshiba Electronic Devices & Storage Corporation