RN2314(TE85L,F) Toshiba

RN2314 to RN2318 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2314, RN2315, RN2316, RN2317, RN2318 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1314 to RN1318 Equivalent Circuit and Bias Resistor Values Type No. R (k ) R (k ) 1 2 RN2314 1 10 USM RN2315 2.2 10 RN2316 4.7 10 JEDEC RN2317 10 4.7 JEITA SC-70 TOSHIBA 2-2E1A RN2318 47 10 Weight: 0.006g (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN2314 to 2318 Collector-emitter voltage V 50 V CEO RN2314 5 RN2315 6 RN2316 7 Emitter-base voltage V V EBO RN2317 15 RN2318 25 Collector current I 100 mA C Collector power dissipation P 100 mW C RN2314 to 2318 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1999-01 2019 2019-11-19 1 Toshiba Electronic Devices & Storage Corporation RN2314 to RN2318 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit RN2314 to 2318 I V =50 V, I = 0 mA 100 nA CBO CB E Collector cut-off current RN2314 to 2318 I V = 50 V, I = 0 mA 500 nA CEO CE B RN2314 V = 5 V, I = 0 mA 0.35 0.65 EB C RN2315 V = 6 V, I = 0 mA 0.37 0.71 EB C Emitter cut-off current RN2316 I V = 7 V, I = 0 mA 0.36 0.68 mA EBO EB C RN2317 V = 15 V, I = 0 mA 0.78 1.46 EB C RN2318 V = 25 V, I = 0 mA 0.33 0.63 EB C RN2314 to 16, 50 RN2318 DC current gain h V = 5 V, I = 10 mA FE CE C RN2317 30 Collector-emitter RN2314 to 2318 V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B saturation voltage RN2314 0.5 2.0 RN2315 0.6 2.5 Input voltage (ON) RN2316 V V = 0.2 V, I = 5 mA 0.7 2.5 V I (ON) CE C RN2317 1.5 3.5 RN2318 2.5 10.0 RN2314 0.3 0.9 RN2315 0.3 1.0 Input voltage (OFF) RN2316 V V = 5 V, I = 0.1 mA 0.3 1.1 V I (OFF) CE C RN2317 0.3 3.0 RN2318 0.5 5.7 Translation frequency RN2314 to 2318 f V = 10 V, I = 5 mA 200 MHz T CE C Collector output V = 10 V, I = 0 mA, CB E RN2314 to 2318 C 3.0 6.0 pF ob capacitance f = 1 MHz RN2314 0.7 1.0 1.3 RN2315 1.54 2.2 2.86 Input resistor RN2316 R 3.29 4.7 6.11 k 1 RN2317 7.0 10.0 13.0 RN2318 32.9 47.0 61.1 RN2314 0.1 RN2315 0.22 Resistor ratio RN2316 R /R 0.47 1 2 RN2317 2.13 RN2318 4.7 2019 2019-11-19 2 Toshiba Electronic Devices & Storage Corporation