RN2401~RN2406 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2401, RN2402, RN2403 RN2404, RN2405, RN2406 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z With built-in bias resistors z Simplified circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN1401 to 1406 Equivalent Circuit Bias Resistor Values C Type No. R1 (k )R2 (k ) R1 RN2401 4.7 4.7 B RN2402 10 10 RN2403 22 22 RN2404 47 47 E JEDEC TO-236MOD RN2405 2.2 47 JEITA SC-59 RN2406 4.7 47 TOSHIBA 2-3F1A Weight:12mg (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN2401 to 2406 Collector-emitter voltage V 50 V CEO RN2401 to 2404 10 V Emitter-base voltage V EBO RN2405, 2406 5 V Collector current I 100 mA C Collector power dissipation P 200 mW C RN2401 to 2406 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1983-06 1 2014-03-01 R2 RN2401~RN2406 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit I V = 50 V, I = 0 100 CBO CB E Collector cut-off current RN2401 to 2406 nA I V = 50 V, I = 0 500 CEO CE B RN2401 0.82 1.52 RN2402 0.38 0.71 V = 10 V, I = 0 EB C RN2403 0.17 0.33 Emitter cut-off current I mA EBO RN2404 0.082 0.15 RN2405 0.078 0.145 V = 5 V, I = 0 EB C RN2406 0.074 0.138 RN2401 30 RN2402 50 RN2403 70 V = 5 V, CE DC current gain h FE I = 10 mA C RN2404 80 RN2405 80 RN2406 80 Collector-emitter I = 5 mA, C RN2401 to 2406 V 0.1 0.3 V CE (sat) saturation voltage I = 0.25 mA B RN2401 1.1 2.0 RN2402 1.2 2.4 RN2403 1.3 3.0 V = 0.2 V, CE Input voltage (ON) V V I (ON) I = 5 mA C RN2404 1.5 5.0 RN2405 0.6 1.1 RN2406 0.7 1.3 RN2401 to 2404 1.0 1.5 V = 5 V, CE Input voltage (OFF) V V I (OFF) I = 0.1 mA C RN2405, 2406 0.5 0.8 V = 10 V, CE Transition frequency RN2401 to 2406 f 200 MHz T I = 5 mA C Collector output V = 10 V, I = 0 CB E RN2401 to 2406 C 3 6 pF ob capacitance f = 1 MHz RN2401 3.29 4.7 6.11 RN2402 7 10 13 RN2403 15.4 22 28.6 Input resistor R1 k RN2404 32.9 47 61.1 RN2405 1.54 2.2 2.86 RN2406 3.29 4.7 6.11 RN2401 to 2404 0.9 1.0 1.1 Resistor ratio RN2405 R1/R2 0.0421 0.0468 0.0515 RN2406 0.09 0.1 0.11 2 2014-03-01