RN2414~RN2418 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2414, RN2415, RN2416, RN2417, RN2418 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications z With built-in bias resistors z Simplified circuit design z Reduce a quantity of parts and manufacturing process z Complementary to RN1414 to RN1418 Equivalent Circuit and Bias Resistor Values Type No. R (k )R (k ) 1 2 RN2414 1 10 RN2415 2.2 10 RN2416 4.7 10 RN2417 10 4.7 RN2418 47 10 JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012g (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN2414 to 2418 Collector-emitter voltage V 50 V CEO RN2414 5 RN2415 6 Emitter-base voltage RN2416 V 7 V EBO RN2417 15 RN2418 25 Collector current I 100 mA C Collector power dissipation P 200 mW C RN2414 to 2418 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1994-08 1 2014-03-01 RN2414~RN2418 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit RN2414 to 2418 I V = 50 V, I = 0 100 nA CBO CB E Collector cut-off current RN2414 to 2418 I V = 50 V, I = 0 500 nA CEO CE B RN2414 V = 5 V, I = 0 0.35 0.65 EB C RN2415 V = 6 V, I = 0 0.37 0.71 EB C Emitter cut-off current RN2416 I V = 7 V, I = 0 0.36 0.68 mA EBO EB C RN2417 V = 15 V, I = 0 0.78 1.46 EB C RN2418 V = 25 V, I = 0 0.33 0.63 EB C RN2414 to 16 50 RN2418 DC current gain h V = 5 V, I = 10 mA FE CE C RN2417 30 Collector-emitter RN2414 to 2418 V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B saturation voltage RN2414 0.5 2.0 RN2415 0.6 2.5 Input voltage (ON) V V = 0.2 V, I = 5 mA V RN2416 0.7 2.5 I (ON) CE C RN2417 1.5 3.5 RN2418 2.5 10.0 RN2414 0.3 0.9 RN2415 0.3 1.0 Input voltage (OFF) RN2416 V V = 5 V, I = 0.1 mA 0.3 1.1 V I (OFF) CE C RN2417 0.3 3.0 RN2418 0.5 5.7 Translation frequency RN2414 to 2418 f V = 10 V, I = 5 mA 200 MHz T CE C Collector output V = 10 V, I = 0, CB E RN2414 to 2418 C 3.0 6.0 pF ob capacitance f = 1 MHz RN2414 0.7 1.0 1.3 RN2415 1.54 2.2 2.86 Input resistor R k RN2416 3.29 4.7 6.11 1 RN2417 7.0 10.0 13.0 RN2418 32.9 47.0 61.1 RN2414 0.1 RN2415 0.22 Resistor ratio RN2416 R /R 0.47 1 2 RN2417 2.13 RN2418 4.7 2 2014-03-01