RN2421~RN2427 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2421, RN2422, RN2423, RN2424 RN2425, RN2426, RN2427 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z High current type (I = 800mA) C(MAX) z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Low V CE (sat) z Complementary to RN1421 to RN1427 Equivalent Circuit and Bias Resistor Values Type No. R1 (k )R2 (k ) RN2421 1 1 RN2422 2.2 2.2 RN2423 4.7 4.7 RN2424 10 10 JEDEC RN2425 0.47 10 JEITA SC-59 RN2426 1 10 TOSHIBA 2-3F1A RN2427 2.2 10 Weight: 0.012 g (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-Base voltage V 50 V CBO RN2421 to 2427 Collector-Emitter voltage V 50 V CEO RN2421 to 2424 10 Emitter-Base voltage V V RN2425, 2426 5 EBO RN2427 6 Collector current I 800 mA c Collector power dissipation P 200 mW c RN2421 to 2427 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1988-02 1 2014-03-01 RN2421~RN2427 Electrical Characteristics (Ta = 25C) Test Characteristics Symbol Test Condition Min Typ. Max Unit Circuit I V = 50V, I = 0 100 CBO CB E Collector cut-off current RN2421 to 2427 nA I V = 50V, I = 0 500 CEO CE B RN2421 3.85 7.14 RN2422 1.75 3.25 V = 10V, I = 0 EB C RN2423 0.82 1.52 Emitter cut-off current I mA RN2424 0.38 0.71 EBO RN2425 0.365 0.682 V = 5V, I = 0 EB C RN2426 0.35 0.65 RN2427 V = 6V, I = 0 0.378 0.703 EB C RN2421 60 RN2422 65 RN2423 70 DC current gain RN2424 h 90 V = 1V, I = 100mA FE CE C RN2425 90 RN2426 90 RN2427 90 RN2421 I = 50mA, I = 2mA C B Collector-Emitter V 0.25 V CE (sat) saturation voltage RN2422 to 2427 I = 50mA, I = 1mA C B RN2421 1.0 3.5 RN2422 1.4 4.5 RN2423 2.0 6.5 V = 0.2V CE Input voltage (ON) V V RN2424 3.0 12.0 I (ON) I = 100mA C RN2425 0.6 2.0 RN2426 0.7 2.5 RN2427 1.0 3.0 RN2421 to 2424 0.8 1.3 V = 5V, CE Input voltage (OFF) V V RN2425, 2426 0.4 0.8 I (OFF) I = 0.1mA C RN2427 0.5 1.0 Transition frequency RN2421 to 2427 f V = 5V, I = 20mA 200 MHz T CE C Collector output V = 10V, I = 0 CB E RN2421 to 2427 C 13 pF ob capacitance f = 1MHz RN2421 0.7 1.0 1.3 RN2422 1.54 2.2 2.86 RN2423 3.29 4.7 6.11 Input resistor R1 k RN2424 7 10 13 RN2425 0.329 0.47 0.61 RN2426 0.7 1.0 1.3 RN2427 1.54 2.2 2.86 RN2421 to 2424 0.9 1.0 1.1 RN2425 0.0423 0.047 0.0517 Resistor ratio R1/R2 RN2426 0.09 0.1 0.11 RN2427 0.2 0.22 0.24 2 2014-03-01