RN2504(TE85L,F) Toshiba

RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . R1 (k ) R2 (k ) SMV RN2501 4.7 4.7 JEDEC RN2502 10 10 JEITA TOSHIBA 2-3L1A RN2503 22 22 Weight: 14 mg (typ.) RN2504 47 47 RN2505 2.2 47 RN2506 4.7 47 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Equivalent Circuit (Top View) Characteristic Symbol Rating Unit Collector-base voltage V 50 V CBO RN2501 to 2506 Collector-emitter voltage V 50 V CEO RN2501 to 2504 10 Emitter base voltage V V EBO RN2505, 2506 5 Collector current I 100 mA C Collector power dissipation P * 300 mW C RN2501 to 2506 Junction temperature Tj 150 C Storage temperature range Tstg 55 to150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating Start of commercial production 1988-10 1 2019-11-19 2019 Toshiba Electronic Devices & Storage Corporation RN2501 to RN2506 Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Test Condition Min Typ. Max Unit I V = 50 V, I = 0 mA 100 CBO CB E Collector cut-off current RN2501 to 2506 nA I V = 50 V, I = 0 mA 500 CEO CE B RN2501 0.82 1.52 RN2502 0.38 0.71 V = 10 V, I = 0 mA EB C RN2503 0.17 0.33 Emitter cut-off current I mA EBO RN2504 0.082 0.15 RN2505 0.078 0.145 V = 5 V, I = 0 mA EB C RN2506 0.074 0.138 RN2501 30 RN2502 50 RN2503 70 DC current gain h V = 5 V, I = 10 mA FE CE C RN2504 80 RN2505 80 RN2506 80 Collector-emitter RN2501 to 2506 V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B saturation voltage RN2501 1.1 2.0 RN2502 1.2 2.4 RN2503 1.3 3.0 Input voltage (ON) V V = 0.2 V, I = 5 mA V I (ON) CE C RN2504 1.5 5.0 RN2505 0.6 1.1 RN2506 0.7 1.3 RN2501 to 2504 1.0 1.5 Input voltage (OFF) V V = 5 V, I = 0.1 mA V I (OFF) CE C RN2505, 2506 0.5 0.8 Transition frequency RN2501 to 2506 f V = 10 V, I = 5 mA 200 MHz T CE C Collector output RN2501 to 2506 C V = 10 V, I = 0 mA, f = 1 MHz 3 6 pF ob CB E capacitance RN2501 3.29 4.7 6.11 RN2502 7 10 13 RN2503 15.4 22 28.6 Input resistance R1 k RN2504 32.9 47 61.1 RN2505 1.54 2.2 2.86 RN2506 3.29 4.7 6.11 RN2501 to 2504 0.9 1.0 1.1 Resistance ratio RN2505 R1/R2 0.0421 0.0468 0.0515 RN2506 0.09 0.1 0.11 2 2019-11-19 2019 Toshiba Electronic Devices & Storage Corporation