RN2510(TE85L,F) Toshiba

RN2510,RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2510, RN2511 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1510 to RN1511 Equivalent Circuit SMV JEDEC JEITA TOSHIBA 2-3L1A Weight: 14 mg (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Equivalent Circuit (top view) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 100 mA C Collector power dissipation P * 300 mW C Junction temperature T 150 C j Storage temperature range T 55 to150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating Start of commercial production 1988-10 1 2019-11-21 2019 Toshiba Electronic Devices & Storage Corporation RN2510,RN2511 Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 50 V, I = 0 mA 100 nA CBO CB E Emitter cut-off current I V = 5 V, I = 0 mA 100 nA EBO EB C DC current gain h V = 5 V, I = 1 mA 120 400 FE CE C Collector-emitter saturation voltage V I = 5 mA, I = 0.25 mA 0.1 0.3 V CE (sat) C B Transition frequency f V = 10 V, I = 5 mA 200 MHz T CE C Collector output capacitance C V = 10 V, I = 0 mA, f = 1 MHz 3 6 pF ob CB E RN2510 3.29 4.7 6.11 Input resistance R1 k RN2511 7 10 13 2 2019-11-21 2019 Toshiba Electronic Devices & Storage Corporation